2SC6026MFV-Y,L3F
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- Mfr.Part #
- 2SC6026MFV-Y,L3F
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A VESM
- Stock
- 16,026
- In Stock ：
- 16,026
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 60MHz
- Factory Lead Time :
- 12 Weeks
- Current - Collector (Ic) (Max) :
- 150mA
- Power - Max :
- 150mW
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- RoHS Status :
- Non-RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 6V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Package / Case :
- SOT-723
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Datasheets
- 2SC6026MFV-Y,L3F
NPN 150°C TJ 100nA ICBO SOT-723 Tape & Reel (TR) Surface Mount
2SC6026MFV-Y,L3F Overview
This device has a DC current gain of 120 @ 2mA 6V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).Collector Emitter Breakdown occurs at 50VV - Maximum voltage.
2SC6026MFV-Y,L3F Features
the DC current gain for this device is 120 @ 2mA 6V
the vce saturation(Max) is 250mV @ 10mA, 100mA
2SC6026MFV-Y,L3F Applications
There are a lot of Toshiba Semiconductor and Storage
2SC6026MFV-Y,L3F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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