2SC5658T2LS
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- Mfr.Part #
- 2SC5658T2LS
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A VMT3
- Stock
- 6,376
- In Stock ：
- 6,376
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 400mV
- Max Power Dissipation :
- 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Factory Lead Time :
- 13 Weeks
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 50V
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 120
- Contact Plating :
- Copper, Tin
- JESD-609 Code :
- e2
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Published :
- 2001
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN
- Max Collector Current :
- 150mA
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Radiation Hardening :
- No
- Package / Case :
- SOT-723
- Terminal Form :
- Flat
- Voltage - Rated DC :
- 50V
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Transition Frequency :
- 180MHz
- Gain Bandwidth Product :
- 180MHz
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 50V
- Current Rating :
- 150mA
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- HTS Code :
- 8541.21.00.75
- Emitter Base Voltage (VEBO) :
- 7V
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 60V
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Continuous Collector Current :
- 150mA
- Max Breakdown Voltage :
- 50V
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Base Part Number :
- 2SC5658
- Datasheets
- 2SC5658T2LS
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-723 Tape & Reel (TR) Surface Mount
2SC5658T2LS Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 1mA 6V.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 150mA for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 150mA.In the part, the transition frequency is 180MHz.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 150mA volts can be achieved.
2SC5658T2LS Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz
2SC5658T2LS Applications
There are a lot of ROHM Semiconductor
2SC5658T2LS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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