2SB1706TL
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- Mfr.Part #
- 2SB1706TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-96
- Datasheet
- Download
- Description
- TRANS PNP 30V 2A TSMT3
- Stock
- 8,651
- In Stock ：
- 8,651
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 280MHz
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 30V
- JESD-609 Code :
- e1
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- 2SB1706
- Element Configuration :
- Single
- Published :
- 2006
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Current Rating :
- -2A
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Pins :
- 3
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 30V
- Max Collector Current :
- 2A
- Operating Temperature :
- 150°C TJ
- Contact Plating :
- Copper, Silver, Tin
- Package / Case :
- SC-96
- Power - Max :
- 500mW
- Factory Lead Time :
- 20 Weeks
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 280MHz
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 30V
- Polarity/Channel Type :
- PNP
- Terminal Position :
- Dual
- Max Power Dissipation :
- 500mW
- Number of Terminations :
- 3
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 370mV @ 75mA, 1.5A
- Time@Peak Reflow Temperature-Max (s) :
- 10
- hFE Min :
- 270
- Voltage - Rated DC :
- -30V
- Terminal Form :
- Gull wing
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Transistor Element Material :
- SILICON
- Datasheets
- 2SB1706TL
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-96 Tape & Reel (TR) Surface Mount
2SB1706TL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 200mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 370mV @ 75mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is -2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 280MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 2A volts.
2SB1706TL Features
the DC current gain for this device is 270 @ 200mA 2V
the vce saturation(Max) is 370mV @ 75mA, 1.5A
the emitter base voltage is kept at 6V
the current rating of this device is -2A
a transition frequency of 280MHz
2SB1706TL Applications
There are a lot of ROHM Semiconductor
2SB1706TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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