2SB1316TL
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- Mfr.Part #
- 2SB1316TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 2A CPT3
- Stock
- 30,000
- In Stock ：
- 30,000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Termination :
- SMD/SMT
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 8V
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Height :
- 2.3mm
- Number of Elements :
- 2
- REACH SVHC :
- No SVHC
- Current Rating :
- -2A
- Published :
- 2004
- JESD-30 Code :
- R-PSSO-G2
- Max Collector Current :
- 2A
- Width :
- 5.5mm
- JESD-609 Code :
- e2
- Continuous Collector Current :
- -2A
- Lead Free :
- Lead Free
- Power Dissipation :
- 1W
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 100V
- Polarity :
- PNP
- Number of Terminations :
- 2
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 2V
- Contact Plating :
- Copper, Tin
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 50MHz
- Voltage :
- 100V
- Factory Lead Time :
- 20 Weeks
- Collector Emitter Breakdown Voltage :
- 100V
- Length :
- 6.5mm
- Transistor Type :
- PNP - Darlington
- Additional Feature :
- BUILT-IN BIAS RESISTOR
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- ECCN Code :
- EAR99
- Current :
- 2A
- Element Configuration :
- Single
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1mA, 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Mount :
- Surface Mount
- HTS Code :
- 8541.29.00.75
- Transistor Application :
- AMPLIFIER
- Base Part Number :
- 2SB1316
- Collector Emitter Saturation Voltage :
- 1.5V
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 50MHz
- Max Breakdown Voltage :
- 100V
- hFE Min :
- 1000
- Max Power Dissipation :
- 10W
- Terminal Form :
- Gull wing
- Voltage - Rated DC :
- -100V
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 100V
- Datasheets
- 2SB1316TL
PNP - Darlington 150°C TJ 10μA ICBO 2 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SB1316TL Overview
This device has a DC current gain of 1000 @ 1A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 1mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 8V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 2A volts is possible.
2SB1316TL Features
the DC current gain for this device is 1000 @ 1A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 8V
the current rating of this device is -2A
a transition frequency of 50MHz
2SB1316TL Applications
There are a lot of ROHM Semiconductor
2SB1316TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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