2SAR522UBTL
- Mfr.Part #
- 2SAR522UBTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-85
- Datasheet
- Download
- Description
- TRANS PNP 20V 0.2A UMT3F
- Stock
- 11,924
- In Stock :
- 11,924
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 200mA
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- -20V
- Package / Case :
- SC-85
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Continuous Collector Current :
- -200mA
- Number of Elements :
- 1
- hFE Min :
- 120
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Terminal Position :
- Dual
- Terminal Finish :
- TIN SILVER COPPER
- Terminal Form :
- Flat
- Mount :
- Surface Mount
- Max Power Dissipation :
- 200mW
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 300mV
- Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 2V
- Collector Emitter Saturation Voltage :
- -300mV
- Max Breakdown Voltage :
- 20V
- Number of Pins :
- 85
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 350MHz
- Collector Emitter Breakdown Voltage :
- 20V
- Transition Frequency :
- 350MHz
- Power - Max :
- 200mW
- Emitter Base Voltage (VEBO) :
- -5V
- Factory Lead Time :
- 13 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e1
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Published :
- 2010
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PDSO-F3
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Datasheets
- 2SAR522UBTL

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-85 Tape & Reel (TR) Surface Mount
2SAR522UBTL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 10mA, 100mA.Continuous collector voltages of -200mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 350MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 200mA volts.
2SAR522UBTL Features
the DC current gain for this device is 120 @ 1mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 350MHz
2SAR522UBTL Applications
There are a lot of ROHM Semiconductor
2SAR522UBTL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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