2SAR522MT2L
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- Mfr.Part #
- 2SAR522MT2L
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS PNP 20V 0.2A VMT3
- Stock
- 6,364
- In Stock ：
- 6,364
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- -5V
- Package / Case :
- SOT-723
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- hFE Min :
- 120
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 2V
- Terminal Form :
- Flat
- Collector Base Voltage (VCBO) :
- -20V
- Max Breakdown Voltage :
- 20V
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Saturation Voltage :
- -120mV
- Mount :
- Surface Mount
- Packaging :
- Cut Tape (CT)
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Published :
- 2010
- Power - Max :
- 150mW
- Collector Emitter Voltage (VCEO) :
- 300mV
- JESD-609 Code :
- e2
- Continuous Collector Current :
- -200mA
- Collector Emitter Breakdown Voltage :
- 20V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 350MHz
- JESD-30 Code :
- R-PDSO-F3
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Max Power Dissipation :
- 150mW
- Factory Lead Time :
- 13 Weeks
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 200mA
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 350MHz
- Datasheets
- 2SAR522MT2L
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SOT-723 Cut Tape (CT) Surface Mount
2SAR522MT2L Overview
In this device, the DC current gain is 120 @ 1mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -120mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.A -200mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 350MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
2SAR522MT2L Features
the DC current gain for this device is 120 @ 1mA 2V
a collector emitter saturation voltage of -120mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 350MHz
2SAR522MT2L Applications
There are a lot of ROHM Semiconductor
2SAR522MT2L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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