2SAR514P5T100
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- Mfr.Part #
- 2SAR514P5T100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 0.7A MPT3
- Stock
- 12,813
- In Stock ：
- 12,813
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Package / Case :
- TO-243AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Collector Emitter Breakdown Voltage :
- 80V
- Power - Max :
- 500mW
- Frequency - Transition :
- 380MHz
- Max Breakdown Voltage :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 13 Weeks
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Reach Compliance Code :
- not_compliant
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 400mV
- Max Collector Current :
- 700mA
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 300mA
- Transistor Type :
- PNP
- Max Power Dissipation :
- 500mW
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Published :
- 2017
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- 2SAR514P5T100
PNP 150°C TJ 1μA ICBO TO-243AA Tape & Reel (TR) Surface Mount
2SAR514P5T100 Overview
In this device, the DC current gain is 120 @ 100mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 15mA, 300mA.An input voltage of 80V volts is the breakdown voltage.Maximum collector currents can be below 700mA volts.
2SAR514P5T100 Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 400mV @ 15mA, 300mA
2SAR514P5T100 Applications
There are a lot of ROHM Semiconductor
2SAR514P5T100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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