2N7008-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max (Abs) :

1 W

DS Breakdown Voltage-Min :

60 V

Factory Lead Time :

16 Weeks

Power Dissipation (Max) :

1W (Tc)

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

230mA

Qualification Status :

Not Qualified

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Gate-Source Voltage (Max) :

±30(V)

Brand :

Microchip Technology / Atmel

Manufacturer :

Microchip

Turn-Off Delay Time :

20 ns

Continuous Drain Current :

0.23(A)

Package Shape :

Round

Element Configuration :

Single

Channel Mode :

Enhancement

Surface Mount :

No

Reach Compliance Code :

Compliant

Feedback Cap-Max (Crss) :

5 pF

Channel Type :

N

Number of Pins :

3

Number of Terminations :

3

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn)

Series :

--

Transistor Type :

1 N-Channel

Continuous Drain Current Id :

230

RoHS :

Details

Terminal Form :

Wire

Supplier Device Package :

TO-92-3

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

Not Applicable

Mounting Style :

Through Hole

Number of Elements :

1

Pin Count :

3

FET Feature :

--

Transistor Polarity :

N-Channel

Number of Elements per Chip :

1

Width :

4.19mm

Height :

5.33mm

Transistor Application :

SWITCHING

Published :

2008

Drain to Source Voltage (Vdss) :

60V

Drain-source On Resistance-Max :

7.5 Ω

Weight :

453.59237mg

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

230mA Tj

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature Classification :

Military

Qualification :

-

Vgs (Max) :

±30V

JESD-30 Code :

O-PBCY-W3

Maximum Operating Temperature :

+150 °C

Drain-Source On-Volt :

60(V)

Terminal Position :

BOTTOM

Product :

MOSFET Small Signal

Number of Terminals :

3

Type :

Power MOSFET

Rad Hardened :

No

Power Dissipation-Max :

1W Tc

Drain to Source Breakdown Voltage :

60V

Rds On (Max) @ Id, Vgs :

7.5 Ω @ 500mA, 10V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

JESD-609 Code :

e3

Operating Temp Range :

-55C to 150C

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Configuration :

Single

MSL :

-

Turn On Delay Time :

20 ns

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Length :

5.21mm

JEDEC-95 Code :

TO-92

Polarity :

N

Contact Plating :

Tin

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

ECCN Code :

EAR99

Package :

Bag

Packaging :

Bulk

Mounting :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Product Category :

MOSFET

Gate to Source Voltage (Vgs) :

30V

Power Dissipation :

1W

Mounting Type :

Through Hole

Lead Free :

Lead Free

Number of Channels :

1

Package Type :

TO-92

Product Type :

MOSFET

Base Product Number :

2N7008

Minimum Operating Temperature :

-55 °C

Product Status :

Active