2N7008
- Mfr.Part #
- 2N7008
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 150MA TO92-3
- Stock
- 35,443
- In Stock :
- 35,443
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Power Dissipation (Max) :
- 1W (Tc)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Series :
- --
- Qualification Status :
- Not Qualified
- Operating Mode :
- ENHANCEMENT MODE
- Package :
- Bag
- Gate to Source Voltage (Vgs) :
- 30V
- Peak Reflow Temperature (Cel) :
- Not Applicable
- RoHS Status :
- ROHS3 Compliant
- Manufacturer :
- Microchip
- Terminal Finish :
- Matte Tin (Sn)
- Channel Mode :
- Enhancement
- Length :
- 5.21mm
- Power Dissipation-Max (Abs) :
- 1 W
- Lead Free :
- Lead Free
- FET Feature :
- --
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- JESD-30 Code :
- O-PBCY-W3
- Maximum Operating Temperature :
- +150 °C
- RoHS :
- Details
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- TO-92-3
- Turn On Delay Time :
- 20 ns
- Polarity/Channel Type :
- N-Channel
- Product Status :
- Active
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Channel Type :
- N
- Drain-Source On-Volt :
- 60(V)
- Transistor Element Material :
- SILICON
- MSL :
- -
- Mounting :
- Through Hole
- Drain-source On Resistance-Max :
- 7.5 Ω
- Power Dissipation-Max :
- 1W Tc
- Product :
- MOSFET Small Signal
- Number of Elements per Chip :
- 1
- Terminal Form :
- Wire
- Rds On (Max) @ Id, Vgs :
- 7.5 Ω @ 500mA, 10V
- Configuration :
- Single
- Transistor Application :
- SWITCHING
- Surface Mount :
- No
- Brand :
- Microchip Technology / Atmel
- Power Dissipation :
- 1W
- Radiation Hardening :
- No
- Terminal Position :
- BOTTOM
- Mounting Style :
- Through Hole
- Continuous Drain Current :
- 0.23(A)
- Transistor Type :
- 1 N-Channel
- Package Shape :
- Round
- Drain to Source Breakdown Voltage :
- 60V
- Operating Temperature Classification :
- Military
- Qualification :
- -
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Gate-Source Voltage (Max) :
- ±30(V)
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 60V
- Product Type :
- MOSFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Polarity :
- N
- Type :
- Power MOSFET
- Feedback Cap-Max (Crss) :
- 5 pF
- Width :
- 4.19mm
- Current - Continuous Drain (Id) @ 25°C :
- 230mA Tj
- Vgs (Max) :
- ±30V
- Turn-Off Delay Time :
- 20 ns
- Continuous Drain Current (ID) :
- 230mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Base Product Number :
- 2N7008
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 5.33mm
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Minimum Operating Temperature :
- -55 °C
- Reach Compliance Code :
- Compliant
- Factory Lead Time :
- 16 Weeks
- Rad Hardened :
- No
- Number of Terminations :
- 3
- Number of Terminals :
- 3
- Package Type :
- TO-92
- Packaging :
- Bulk
- Weight :
- 453.59237mg
- Published :
- 2008
- Continuous Drain Current Id :
- 230
- JEDEC-95 Code :
- TO-92
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Number of Channels :
- 1
- Transistor Polarity :
- N-Channel
- Product Category :
- MOSFET
- Operating Temp Range :
- -55C to 150C
- DS Breakdown Voltage-Min :
- 60 V
- Datasheets
- 2N7008
,TO-226_straightlead.jpg)
N-Channel Bulk 7.5 Ω @ 500mA, 10V ±30V 50pF @ 25V 60V TO-226-3, TO-92-3 (TO-226AA)
2N7008-G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 50pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 230mA amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [20 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 20 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 60 V to maintain normal operation.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
2N7008-G Features
a continuous drain current (ID) of 230mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 20 ns
a 60V drain to source voltage (Vdss)
2N7008-G Applications
There are a lot of Microchip Technology
2N7008-G applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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