2N7002TC
- Mfr.Part #
- 2N7002TC
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 115MA SOT23-3
- Stock
- 14,335
- In Stock :
- 14,335
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- Not Qualified
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PDSO-G3
- Length :
- 2.9mm
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 10
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 60V
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 7 ns
- Power Dissipation :
- 330mW
- Element Configuration :
- Single
- Height :
- 1mm
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Continuous Drain Current (ID) :
- 115mA
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Number of Channels :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Turn-Off Delay Time :
- 11 ns
- Published :
- 2009
- Terminal Position :
- Dual
- Width :
- 1.3mm
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 330mW Ta
- Terminal Form :
- Gull wing
- Drain to Source Breakdown Voltage :
- 60V
- Current - Continuous Drain (Id) @ 25°C :
- 115mA Ta
- Packaging :
- Tape and Reel (TR)
- Feedback Cap-Max (Crss) :
- 5 pF
- Rds On (Max) @ Id, Vgs :
- 7.5 Ω @ 500mA, 10V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- 115mA
- Weight :
- 7.994566mg
- Gate to Source Voltage (Vgs) :
- 40V
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Application :
- SWITCHING
- Datasheets
- 2N7002TC

N-Channel Tape & Reel (TR) 7.5 Ω @ 500mA, 10V ±20V 50pF @ 25V TO-236-3, SC-59, SOT-23-3
2N7002TC Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 50pF @ 25V.This device conducts a continuous drain current (ID) of 115mA, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 11 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 40V.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).
2N7002TC Features
a continuous drain current (ID) of 115mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 11 ns
2N7002TC Applications
There are a lot of Diodes Incorporated
2N7002TC applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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