2N7002T-7
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- Mfr.Part #
- 2N7002T-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-523
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 115MA SOT-523
- Stock
- 6,548
- In Stock ：
- 6,548
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Voltage - Rated DC :
- 60V
- Continuous Drain Current (ID) :
- 115mA
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Channels :
- 1
- Number of Pins :
- 3
- Resistance :
- 7.5Ohm
- Published :
- 2009
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Factory Lead Time :
- 15 Weeks
- Pin Count :
- 3
- Min Breakdown Voltage :
- 60V
- Turn-Off Delay Time :
- 11 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Terminal Form :
- Gull wing
- Power Dissipation :
- 150mW
- Additional Feature :
- High Reliability
- Mounting Type :
- Surface Mount
- Weight :
- 2.012816mg
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- Package / Case :
- SOT-523
- Feedback Cap-Max (Crss) :
- 5 pF
- Current - Continuous Drain (Id) @ 25°C :
- 115mA Ta
- Current Rating :
- 115mA
- Rds On (Max) @ Id, Vgs :
- 7.5 Ω @ 50mA, 5V
- REACH SVHC :
- No SVHC
- Length :
- 1.6mm
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Nominal Vgs :
- 2 V
- Height :
- 750μm
- Drain to Source Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Turn On Delay Time :
- 7 ns
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Threshold Voltage :
- 2V
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 800μm
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 150mW Ta
- Datasheets
- 2N7002T-7
N-Channel Tape & Reel (TR) 7.5 Ω @ 50mA, 5V ±20V 50pF @ 25V SOT-523
2N7002T-7-F Overview
A device's maximum input capacitance is 50pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 115mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 11 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 2V.This device uses no drive voltage (5V 10V) to reduce its overall power consumption.
2N7002T-7-F Features
a continuous drain current (ID) of 115mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 11 ns
a threshold voltage of 2V
2N7002T-7-F Applications
There are a lot of Diodes Incorporated
2N7002T-7-F applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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