2N7002PW,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Power Dissipation-Max :

260mW Ta

Package / Case :

SC-70, SOT-323

Vgs (Max) :

±20V

Element Configuration :

Single

Max Dual Supply Voltage :

60V

Factory Lead Time :

4 Weeks

Fall Time (Typ) :

4 ns

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

310mA Ta

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

0.8nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Drain to Source Breakdown Voltage :

60V

Terminal Position :

Dual

FET Type :

N-Channel

Rise Time :

4ns

Additional Feature :

LOGIC LEVEL COMPATIBLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

310mW

Number of Elements :

1

Contact Plating :

Tin

Radiation Hardening :

No

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Number of Pins :

3

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Surface Mount :

yes

Turn-Off Delay Time :

10 ns

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

3 ns

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

310mA

Published :

2010

Pin Count :

3

Resistance :

1.6Ohm

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 500mA, 10V

Lead Free :

Lead Free