2N7002L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

200mW Ta

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Number of Pins :

3

Mounting Type :

Surface Mount

Number of Terminations :

3

Terminal Form :

Gull wing

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

60V

Transistor Application :

SWITCHING

Max Junction Temperature (Tj) :

150°C

Continuous Drain Current (ID) :

115mA

Vgs (Max) :

±20V

Lead Free :

Lead Free

Weight :

30mg

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

Height :

1.11mm

Element Configuration :

Single

Turn On Delay Time :

20 ns

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Channels :

1

Pin Count :

3

Mount :

Surface Mount

Threshold Voltage :

2.5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Turn-Off Delay Time :

40 ns

Current - Continuous Drain (Id) @ 25°C :

115mA Ta

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Number of Elements :

1

ECCN Code :

EAR99

Published :

2012

Factory Lead Time :

8 Weeks

Feedback Cap-Max (Crss) :

5 pF

Rds On (Max) @ Id, Vgs :

7.5 Ω @ 500mA, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED