2N7002KT1G
- Mfr.Part #
- 2N7002KT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 320MA SOT23-3
- Stock
- 63,285
- In Stock :
- 63,285
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Turn-Off Delay Time :
- 55.8 ns
- Surface Mount :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 24.5pF @ 20V
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 320mA Ta
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Mounting Type :
- Surface Mount
- Rise Time :
- 9ns
- Number of Pins :
- 3
- Fall Time (Typ) :
- 9 ns
- JESD-609 Code :
- e3
- Published :
- 2008
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Height :
- 1.11mm
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 350mW Ta
- Number of Channels :
- 1
- Turn On Delay Time :
- 12.2 ns
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Width :
- 1.4mm
- Halogen Free :
- Halogen Free
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Threshold Voltage :
- 2.3V
- Terminal Position :
- Dual
- Pin Count :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 3.04mm
- Power Dissipation :
- 420mW
- Factory Lead Time :
- 7 Weeks
- Drain to Source Breakdown Voltage :
- 60V
- Resistance :
- 1.6Ohm
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Max Junction Temperature (Tj) :
- 150°C
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 0.7nC @ 4.5V
- Feedback Cap-Max (Crss) :
- 5 pF
- ECCN Code :
- EAR99
- Nominal Vgs :
- 2.3 V
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 380mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Rds On (Max) @ Id, Vgs :
- 1.6 Ω @ 500mA, 10V
- Datasheets
- 2N7002KT1G

N-Channel Tape & Reel (TR) 1.6 Ω @ 500mA, 10V ±20V 24.5pF @ 20V 0.7nC @ 4.5V TO-236-3, SC-59, SOT-23-3
2N7002KT1G Description
The N-channel Small Signal MOSFET 2N7002KT1G has a drain-source voltage of 60V and a steady-state drain current of 320mA. It can be used in low-side load switches, level shift circuits, DC-to-DC converters, portable DSCs, and PDAs.
2N7002KT1G Features
-
ESD Protected
-
Low RDS(on)
-
Surface Mount Package
-
2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
-
These Devices are Pb?Free, Halogen Free/BFR Free, and are RoHS Compliant
2N7002KT1G Applications
-
Low Side Load Switch
-
Level Shift Circuits
-
DC?DC Converter
-
Portable Applications i.e. DSC, PDA, Cell Phone, etc.
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