2N7002K
- Mfr.Part #
- 2N7002K
- Manufacturer
- MDD
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET SOT-23 N Channel 60V
- Stock
- 101
- In Stock :
- 101
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- Manufacturer :
- MDD
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 1.11mm
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 350mW Ta
- Turn On Delay Time :
- 12.2 ns
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 55.8 ns
- FET Type :
- N-Channel
- Max Operating Temperature :
- 150°C
- Power Dissipation :
- 300mW
- Width :
- 1.3mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Resistance :
- 2Ohm
- Rds On Max :
- 2 Ω
- Threshold Voltage :
- 2.5V
- Rds On (Max) @ Id, Vgs :
- 2Ohm @ 500mA, 10V
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 60V
- Factory Lead Time :
- 8 Weeks
- Mount :
- Surface Mount
- Input Capacitance :
- 50pF
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 320mA
- Current :
- 3A
- Voltage :
- 60V
- Number of Channels :
- 1
- Published :
- 2016
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- Supplier Device Package :
- SOT-23 (TO-236AB)
- Length :
- 2.92mm
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 300mA Ta
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Resistance :
- 2Ohm
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Drain to Source Breakdown Voltage :
- 60V
- Max Junction Temperature (Tj) :
- 150°C
- Mounting Type :
- Surface Mount
- Contact Plating :
- Tin
- Datasheets
- 2N7002K

N-Channel Tape & Reel (TR) 2Ohm @ 500mA, 10V ±20V 50pF @ 25V 60V TO-236-3, SC-59, SOT-23-3
2N7002K Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 50pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.As a result of its turn-off delay time, which is 55.8 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 2Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 12.2 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.5V.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
2N7002K Features
a continuous drain current (ID) of 320mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 55.8 ns
single MOSFETs transistor is 2Ohm
a threshold voltage of 2.5V
a 60V drain to source voltage (Vdss)
2N7002K Applications
There are a lot of ON Semiconductor
2N7002K applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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