2N7002H6327XTSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Power Dissipation-Max :

500mW Ta

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Height :

1.1mm

JESD-609 Code :

e3

Threshold Voltage :

2.1V

FET Type :

N-Channel

ECCN Code :

EAR99

Max Junction Temperature (Tj) :

150°C

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Elements :

1

Qualification Status :

Not Qualified

Published :

2012

Pbfree Code :

yes

Terminal Form :

Gull wing

Terminal Position :

Dual

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Width :

1.3mm

Number of Pins :

3

Max Dual Supply Voltage :

60V

Current - Continuous Drain (Id) @ 25°C :

300mA Ta

Element Configuration :

Single

Continuous Drain Current (ID) :

300mA

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Power Dissipation :

200mW

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Mounting Type :

Surface Mount

Voltage - Rated DC :

60V

Rds On (Max) @ Id, Vgs :

3 Ω @ 500mA, 10V

Drain to Source Breakdown Voltage :

60V

Packaging :

Cut Tape (CT)

Turn-Off Delay Time :

5.5 ns

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 10V

Turn On Delay Time :

3 ns

Number of Channels :

1

Operating Mode :

ENHANCEMENT MODE

Rise Time :

3.3ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

10 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

3Ohm

Current Rating :

115mA

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

20pF @ 25V

Length :

2.9mm

Vgs (Max) :

±20V

Halogen Free :

Halogen Free

Series :

OptiMOS™

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3