2N7002H-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

High Reliability

Published :

2013

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Power Dissipation-Max :

370mW Ta

Reference Standard :

AEC-Q101

Package / Case :

TO-236-3, SC-59, SOT-23-3

ECCN Code :

EAR99

Factory Lead Time :

14 Weeks

HTS Code :

8541.21.00.95

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

60V

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Finish :

Matte Tin (Sn) - annealed

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

5V

Drain to Source Voltage (Vdss) :

60V

JESD-609 Code :

e3

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Mount :

Surface Mount

Continuous Drain Current (ID) :

170mA

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Input Capacitance (Ciss) (Max) @ Vds :

26pF @ 25V

Manufacturer Package Identifier :

2N7002H-7

Gate Charge (Qg) (Max) @ Vgs :

0.35nC @ 4.5V

Drain Current-Max (Abs) (ID) :

0.17A

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

7.5 Ω @ 50mA, 5V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-G3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE