2N7002F,215

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

0.69nC @ 10V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

830mW Ta

Drain Current-Max (Abs) (ID) :

0.475A

Additional Feature :

LOGIC LEVEL COMPATIBLE

Time@Peak Reflow Temperature-Max (s) :

40

Current - Continuous Drain (Id) @ 25°C :

475mA Ta

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

2 Ω @ 500mA, 10V

Feedback Cap-Max (Crss) :

10 pF

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

3

Published :

2006

Drain to Source Voltage (Vdss) :

60V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

Surface Mount :

yes

RoHS Status :

Non-RoHS Compliant

Pin Count :

3

Drain-source On Resistance-Max :

2Ohm

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

60V

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

475mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

ECCN Code :

EAR99

JESD-609 Code :

e3

Series :

TrenchMOS™

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Number of Elements :

1

Vgs (Max) :

±30V

HTS Code :

8541.21.00.75