2N7002E
- Mfr.Part #
- 2N7002E
- Manufacturer
- Vishay
- Package / Case
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 240MA SOT23-3
- Stock
- 91,792
- In Stock :
- 91,792
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Nominal Vgs :
- 2 V
- JESD-609 Code :
- e0
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Subcategory :
- FET General Purpose Power
- Pbfree Code :
- No
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Voltage (Vdss) :
- 60 V
- Polarity/Channel Type :
- N-Channel
- Input Capacitance :
- 40 pF
- Pin Count :
- 3
- Power Dissipation-Max (Abs) :
- 0.35 W
- Rds On Max :
- 3 Ω
- Number of Pins :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Number of Channels :
- 1
- Min Operating Temperature :
- -55 °C
- Manufacturer :
- Vishay Siliconix
- Drain to Source Breakdown Voltage :
- 60 V
- Surface Mount :
- yes
- Threshold Voltage :
- 2 V
- Continuous Drain Current (ID) :
- 300 mA
- Reach Compliance Code :
- Unknown
- Drain to Source Resistance :
- 3 Ω
- Configuration :
- Single
- Element Configuration :
- Single
- Max Operating Temperature :
- 150 °C
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- RoHS :
- Compliant
- Drain Current-Max (Abs) (ID) :
- 0.25 A
- Max Power Dissipation :
- 350 mW
- Gate to Source Voltage (Vgs) :
- 20 V
- Datasheets
- 2N7002E

60 V
2N7002E Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60 V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60 V.There is no drain current on this device since the maximum continuous current it can conduct is 0.25 A.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 3 Ω.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20 VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2 V.The transistor must receive a 60 V drain to source voltage (Vdss) in order to function.
2N7002E Features
a continuous drain current (ID) of 300 mA
a drain-to-source breakdown voltage of 60 V voltage
single MOSFETs transistor is 3 Ω
a threshold voltage of 2 V
a 60 V drain to source voltage (Vdss)
2N7002E Applications
There are a lot of NXP USA Inc.
2N7002E applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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