2N7002E

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Mfr.Part #
2N7002E
Manufacturer
Panasonic
Package / Case
Datasheet
Download
Description
MOSFET N-CH 60V 300MA SOT23-3
Stock
91,792
In Stock :
91,792

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Manufacturer :
Panasonic
Product Category :
Transistors - FETs, MOSFETs - Single
Reach Compliance Code :
Unknown
JESD-609 Code :
e0
Drain to Source Voltage (Vdss) :
60 V
Drain to Source Resistance :
3 Ω
Power Dissipation-Max (Abs) :
0.35 W
Gate to Source Voltage (Vgs) :
20 V
Nominal Vgs :
2 V
Mount :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Terminal Finish :
Tin/Lead (Sn/Pb)
Drain to Source Breakdown Voltage :
60 V
Threshold Voltage :
2 V
Rds On Max :
3 Ω
Input Capacitance :
40 pF
REACH SVHC :
No SVHC
Min Operating Temperature :
-55 °C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain Current-Max (Abs) (ID) :
0.25 A
Surface Mount :
yes
Max Operating Temperature :
150 °C
Number of Pins :
3
RoHS :
Compliant
Polarity/Channel Type :
N-Channel
Configuration :
Single
Element Configuration :
Single
Manufacturer :
Vishay Siliconix
Continuous Drain Current (ID) :
300 mA
Subcategory :
FET General Purpose Power
Max Power Dissipation :
350 mW
Number of Channels :
1
Pbfree Code :
No
Pin Count :
3
Datasheets
2N7002E
Introducing Transistors - FETs, MOSFETs - Single Panasonic 2N7002E from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Channels:1, 2N7002E pinout, 2N7002E datasheet PDF, 2N7002E amp .Beyond Transistors - FETs, MOSFETs - Single Panasonic 2N7002E ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Panasonic 2N7002E


60 V

2N7002E Overview


In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60 V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60 V.There is no drain current on this device since the maximum continuous current it can conduct is 0.25 A.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 3 Ω.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20 VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2 V.The transistor must receive a 60 V drain to source voltage (Vdss) in order to function.

2N7002E Features


a continuous drain current (ID) of 300 mA
a drain-to-source breakdown voltage of 60 V voltage
single MOSFETs transistor is 3 Ω
a threshold voltage of 2 V
a 60 V drain to source voltage (Vdss)


2N7002E Applications


There are a lot of NXP USA Inc.
2N7002E applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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