2N7002BKW,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Factory Lead Time :

4 Weeks

Additional Feature :

LOGIC LEVEL COMPATIBLE

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

60V

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G3

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 4.5V

Published :

2010

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Transistor Application :

SWITCHING

Power Dissipation-Max :

275mW Ta

Drain Current-Max (Abs) (ID) :

0.31A

Current - Continuous Drain (Id) @ 25°C :

310mA Ta

Series :

Automotive, AEC-Q101, TrenchMOS™

Vgs (Max) :

±20V

Pin Count :

3

Package / Case :

SC-70, SOT-323

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Number of Terminations :

3

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Number of Elements :

1

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

DS Breakdown Voltage-Min :

60V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 500mA, 10V

Pulsed Drain Current-Max (IDM) :

1.2A

Packaging :

Tape and Reel (TR)