2N7002BKM,315

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.1V @ 250μA

RoHS Status :

ROHS3 Compliant

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drain Current-Max (Abs) (ID) :

0.45A

Lead Free :

Lead Free

Published :

2010

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 500mA, 10V

Power Dissipation-Max :

360mW Ta

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

Number of Pins :

3

Turn On Delay Time :

5 ns

Turn-Off Delay Time :

12 ns

Number of Terminations :

3

Vgs (Max) :

±20V

Fall Time (Typ) :

7 ns

Current - Continuous Drain (Id) @ 25°C :

450mA Ta

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 4.5V

Drain to Source Breakdown Voltage :

60V

Max Dual Supply Voltage :

60V

FET Type :

N-Channel

JESD-609 Code :

e3

Package / Case :

SC-101, SOT-883

Case Connection :

DRAIN

Element Configuration :

Single

Factory Lead Time :

20 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Terminal Position :

BOTTOM

Series :

Automotive, AEC-Q101, TrenchMOS™

Power Dissipation :

715mW

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Rise Time :

6ns

Continuous Drain Current (ID) :

450mA

Number of Elements :

1

Transistor Element Material :

SILICON