2N7002-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

1.437803g

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Continuous Drain Current (ID) :

115mA

Gate to Source Voltage (Vgs) :

40V

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

60V

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Feedback Cap-Max (Crss) :

5 pF

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

FET Type :

N-Channel

Number of Terminations :

3

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

115mA Ta

Package / Case :

TO-236-3, SC-59, SOT-23-3

Mount :

Surface Mount

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

2N7002

Number of Channels :

1

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Power Dissipation-Max :

200mW Ta

Vgs (Max) :

±20V

Published :

2009

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

7.5 Ω @ 500mA, 10V