2N7002-G
- Mfr.Part #
- 2N7002-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 115MA SOT23
- Stock
- 798,028
- In Stock :
- 798,028
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 60V
- Current - Continuous Drain (Id) @ 25°C :
- 115mA Tj
- Qualification :
- -
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Mounting Style :
- SMD/SMT
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature Classification :
- Military
- Maximum Operating Temperature :
- + 150 C
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Vgs (Max) :
- ±30V
- ECCN Code :
- EAR99
- Number of Channels :
- 1
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Width :
- 1.3mm
- Continuous Drain Current :
- 0.115(A)
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Ambient Temperature Range High :
- 150°C
- Product Status :
- Active
- Element Configuration :
- Single
- Supplier Device Package :
- SOT-23 (TO-236AB)
- Product Type :
- MOSFET
- Number of Elements :
- 1
- Continuous Drain Current Id :
- 115
- Contact Plating :
- Tin
- Pin Count :
- 3
- Number of Terminations :
- 3
- Drain to Source Breakdown Voltage :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Product Category :
- MOSFET
- Transistor Polarity :
- N-Channel
- Channel Type :
- N Channel
- Transistor Type :
- 1 N-Channel
- Continuous Drain Current (ID) :
- 115mA
- Terminal Form :
- Gull wing
- Additional Feature :
- HIGH INPUT IMPEDANCE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation (Max) :
- 360mW (Ta)
- Product :
- MOSFET Small Signal
- Gate-Source Voltage (Max) :
- ±30(V)
- RoHS :
- Details
- Rds On (Max) @ Id, Vgs :
- 7.5 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Length :
- 2.92mm
- Drain-Source On-Volt :
- 60(V)
- FET Feature :
- --
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Published :
- 2013
- Configuration :
- Single
- Rad Hardened :
- No
- Weight :
- 1.437803g
- Channel Mode :
- Enhancement
- Type :
- Power MOSFET
- MSL :
- -
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Turn-Off Delay Time :
- 20 ns
- Operating Temp Range :
- -55C to 150C
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mount :
- Surface Mount
- Brand :
- Microchip Technology / Atmel
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation :
- 360mW
- Manufacturer :
- Microchip
- Factory Lead Time :
- 14 Weeks
- Feedback Cap-Max (Crss) :
- 5 pF
- Package Type :
- SOT-23
- Mounting :
- Surface Mount
- Base Product Number :
- 2N7002
- Packaging :
- Tape and Reel (TR)
- Polarity :
- N
- Radiation Hardening :
- No
- Turn On Delay Time :
- 20 ns
- Series :
- --
- Height :
- 1.12mm
- Power Dissipation-Max :
- 360mW Ta
- Datasheets
- 2N7002-G

N-Channel Tape & Reel (TR) 7.5 Ω @ 500mA, 10V ±30V 50pF @ 25V 60V TO-236-3, SC-59, SOT-23-3
2N7002-G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 50pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
2N7002-G Features
a continuous drain current (ID) of 115mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 20 ns
a 60V drain to source voltage (Vdss)
2N7002-G Applications
There are a lot of Microchip Technology
2N7002-G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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