2N7002-G
- Mfr.Part #
- 2N7002-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 115MA SOT23
- Stock
- 798,028
- In Stock :
- 798,028
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Style :
- SMD/SMT
- Qualification :
- -
- Power Dissipation-Max :
- 360mW Ta
- Terminal Position :
- Dual
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 20 ns
- Configuration :
- Single
- MSL :
- -
- Transistor Application :
- SWITCHING
- Minimum Operating Temperature :
- - 55 C
- Number of Pins :
- 3
- Factory Lead Time :
- 14 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 360mW
- Contact Plating :
- Tin
- Current - Continuous Drain (Id) @ 25°C :
- 115mA Tj
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Series :
- --
- Turn On Delay Time :
- 20 ns
- Rad Hardened :
- No
- Terminal Form :
- Gull wing
- Number of Channels :
- 1
- Brand :
- Microchip Technology / Atmel
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Ambient Temperature Range High :
- 150°C
- Mount :
- Surface Mount
- Base Product Number :
- 2N7002
- Continuous Drain Current (ID) :
- 115mA
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Drain to Source Voltage (Vdss) :
- 60V
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 2.92mm
- Gate to Source Voltage (Vgs) :
- 30V
- Package Type :
- SOT-23
- RoHS :
- Details
- Gate-Source Voltage (Max) :
- ±30(V)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 60V
- Product Status :
- Active
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Feedback Cap-Max (Crss) :
- 5 pF
- Published :
- 2013
- Product Category :
- MOSFET
- Element Configuration :
- Single
- Transistor Polarity :
- N-Channel
- Continuous Drain Current Id :
- 115
- Manufacturer :
- Microchip
- Supplier Device Package :
- SOT-23 (TO-236AB)
- Maximum Operating Temperature :
- + 150 C
- Vgs (Max) :
- ±30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation (Max) :
- 360mW (Ta)
- Type :
- Power MOSFET
- Operating Temperature Classification :
- Military
- Width :
- 1.3mm
- Operating Temp Range :
- -55C to 150C
- Product Type :
- MOSFET
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Product :
- MOSFET Small Signal
- Additional Feature :
- HIGH INPUT IMPEDANCE
- Channel Type :
- N Channel
- Packaging :
- Tape and Reel (TR)
- FET Feature :
- --
- Continuous Drain Current :
- 0.115(A)
- FET Type :
- N-Channel
- Pin Count :
- 3
- Weight :
- 1.437803g
- Height :
- 1.12mm
- Transistor Type :
- 1 N-Channel
- Channel Mode :
- Enhancement
- JESD-609 Code :
- e3
- Mounting :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 7.5 Ω @ 500mA, 10V
- Drain-Source On-Volt :
- 60(V)
- Polarity :
- N
- Datasheets
- 2N7002-G

N-Channel Tape & Reel (TR) 7.5 Ω @ 500mA, 10V ±30V 50pF @ 25V 60V TO-236-3, SC-59, SOT-23-3
2N7002-G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 50pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
2N7002-G Features
a continuous drain current (ID) of 115mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 20 ns
a 60V drain to source voltage (Vdss)
2N7002-G Applications
There are a lot of Microchip Technology
2N7002-G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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