2N7002-G
- Mfr.Part #
- 2N7002-G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- FET 60V 5.0 OHM SOT23
- Stock
- 798,028
- In Stock :
- 798,028
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- FET Feature :
- --
- Feedback Cap-Max (Crss) :
- 5 pF
- Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Factory Lead Time :
- 14 Weeks
- Operating Temp Range :
- -55C to 150C
- MSL :
- -
- Drain to Source Voltage (Vdss) :
- 60V
- Rad Hardened :
- No
- Drain to Source Breakdown Voltage :
- 60V
- Published :
- 2013
- Package Type :
- SOT-23
- Transistor Type :
- 1 N-Channel
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Minimum Operating Temperature :
- - 55 C
- Number of Channels :
- 1
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Maximum Operating Temperature :
- + 150 C
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Type :
- Power MOSFET
- FET Type :
- N-Channel
- Product :
- MOSFET Small Signal
- Polarity :
- N
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±30V
- Channel Mode :
- Enhancement
- Terminal Form :
- Gull wing
- Mounting Style :
- SMD/SMT
- Weight :
- 1.437803g
- Product Type :
- MOSFET
- Base Product Number :
- 2N7002
- Continuous Drain Current :
- 0.115(A)
- Continuous Drain Current (ID) :
- 115mA
- Transistor Element Material :
- SILICON
- Additional Feature :
- HIGH INPUT IMPEDANCE
- Operating Temperature Classification :
- Military
- Power Dissipation :
- 360mW
- Brand :
- Microchip Technology / Atmel
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Contact Plating :
- Tin
- Supplier Device Package :
- SOT-23 (TO-236AB)
- Product Category :
- MOSFET
- Product Status :
- Active
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Polarity :
- N-Channel
- Height :
- 1.12mm
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Manufacturer :
- Microchip
- Series :
- --
- Mounting :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 30V
- JESD-609 Code :
- e3
- Power Dissipation (Max) :
- 360mW (Ta)
- Continuous Drain Current Id :
- 115
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 20 ns
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 115mA Tj
- Gate-Source Voltage (Max) :
- ±30(V)
- Drain-Source On-Volt :
- 60(V)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Ambient Temperature Range High :
- 150°C
- RoHS :
- Details
- Qualification :
- -
- Number of Elements :
- 1
- Length :
- 2.92mm
- Mount :
- Surface Mount
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 7.5 Ω @ 500mA, 10V
- Width :
- 1.3mm
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 360mW Ta
- Turn-Off Delay Time :
- 20 ns
- Channel Type :
- N Channel
- Datasheets
- 2N7002-G

N-Channel Tape & Reel (TR) 7.5 Ω @ 500mA, 10V ±30V 50pF @ 25V 60V TO-236-3, SC-59, SOT-23-3
2N7002-G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 50pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
2N7002-G Features
a continuous drain current (ID) of 115mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 20 ns
a 60V drain to source voltage (Vdss)
2N7002-G Applications
There are a lot of Microchip Technology
2N7002-G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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