2N7002
- Mfr.Part #
- 2N7002
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 13,115
- In Stock :
- 13,115
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 115mA
- Drain to Source Breakdown Voltage :
- 60V
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 7.5Ohm @ 500mA, 10V
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Drain to Source Resistance :
- 1.2Ohm
- Base Part Number :
- 2N7002
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Dual Supply Voltage :
- 60V
- Nominal Vgs :
- 2.1 V
- Current - Continuous Drain (Id) @ 25°C :
- 115mA Ta
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 200mW Ta
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 60V
- Factory Lead Time :
- 8 Weeks
- Max Operating Temperature :
- 150°C
- Height :
- 930μm
- Current Rating :
- 115mA
- Voltage :
- 60V
- Current :
- 115mA
- Contact Plating :
- Tin
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- REACH SVHC :
- No SVHC
- Min Operating Temperature :
- -55°C
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Length :
- 2.92mm
- Number of Elements :
- 1
- Threshold Voltage :
- 2.1V
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Power Dissipation :
- 200mW
- Supplier Device Package :
- SOT-23 (TO-236AB)
- Rds On Max :
- 7.5 Ω
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 3.05mm
- Resistance :
- 5.3Ohm
- Drain to Source Voltage (Vdss) :
- 60V
- Input Capacitance :
- 50pF
- Published :
- 2016
- Datasheets
- 2N7002

N-Channel Tape & Reel (TR) 7.5Ohm @ 500mA, 10V ±20V 50pF @ 25V 60V TO-236-3, SC-59, SOT-23-3
2N7002 Description
2N7002 is a N-channel enhanced FET, which is produced by high cell density and DMOS process. The product minimizes on-resistance and provides durable, reliable and fast switching performance. It can be used in most applications that require up to 400 mA DC and can provide pulse currents up to 2A. Suitable for low-voltage, low-current applications, such as small servo motor control or power MOSFET gate drivers.
2N7002 Features
High density battery design for very low RDS (ON)
High saturation current capacity
Voltage controlled small signal switch
Solid and reliable
2N7002 Application
Power management
motor drive and control
audio
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