2N7000RLRAG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

3 V

Current Rating :

200mA

Terminal Position :

BOTTOM

Element Configuration :

Single

Number of Elements :

1

Power Dissipation :

350mW

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 25V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

REACH SVHC :

No SVHC

Resistance :

5Ohm

Mounting Type :

Through Hole

ECCN Code :

EAR99

Published :

2004

Gate to Source Voltage (Vgs) :

20V

Surface Mount :

No

FET Type :

N-Channel

Turn-Off Delay Time :

10 ns

Contact Plating :

Copper, Silver, Tin

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Pbfree Code :

yes

Packaging :

Cut Tape (CT)

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

3V @ 1mA

Pin Count :

3

Drain to Source Breakdown Voltage :

60V

Threshold Voltage :

3V

Drain Current-Max (Abs) (ID) :

0.2A

Height :

4.318mm

Feedback Cap-Max (Crss) :

5 pF

RoHS Status :

RoHS Compliant

Width :

3.175mm

Power Dissipation-Max :

350mW Tc

Number of Terminations :

3

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Pins :

3

Voltage - Rated DC :

60V

JESD-609 Code :

e1

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Continuous Drain Current (ID) :

200mA

Time@Peak Reflow Temperature-Max (s) :

40

Turn On Delay Time :

10 ns

Weight :

4.535924g

Operating Mode :

ENHANCEMENT MODE

Length :

4.445mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V