2N7000RLRA
- Mfr.Part #
- 2N7000RLRA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 200MA TO92-3
- Stock
- 8,717
- In Stock :
- 8,717
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 0.2A
- Mounting Type :
- Through Hole
- Qualification Status :
- COMMERCIAL
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Vgs (Max) :
- ±20V
- Pin Count :
- 3
- Feedback Cap-Max (Crss) :
- 5 pF
- Peak Reflow Temperature (Cel) :
- 240
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 60V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- RoHS Status :
- Non-RoHS Compliant
- Terminal Finish :
- TIN LEAD
- Reach Compliance Code :
- Unknown
- Rds On (Max) @ Id, Vgs :
- 5 Ω @ 500mA, 10V
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- JESD-609 Code :
- e0
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 60pF @ 25V
- JESD-30 Code :
- O-PBCY-T3
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Drain-source On Resistance-Max :
- 5Ohm
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 350mW Tc
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Ta
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min :
- 60V
- Pbfree Code :
- No
- Terminal Position :
- BOTTOM
- Packaging :
- Tape and Reel (TR)
- Datasheets
- 2N7000RLRA

N-Channel Tape & Reel (TR) 5 Ω @ 500mA, 10V ±20V 60pF @ 25V 60V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N7000RLRA Overview
The maximum input capacitance of this device is 60pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 0.2A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 60V.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
2N7000RLRA Features
a 60V drain to source voltage (Vdss)
2N7000RLRA Applications
There are a lot of Rochester Electronics, LLC
2N7000RLRA applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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