2N7000G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Drain to Source Voltage (Vdss) :

60V

Packaging :

Bulk

Drain to Source Breakdown Voltage :

60V

Width :

4.19mm

Number of Terminals :

3

Package :

Bag

FET Feature :

--

Operating Temp Range :

-55C to 150C

Configuration :

Single

Mount :

Through Hole

Power Dissipation-Max (Abs) :

1 W

Transistor Element Material :

SILICON

Pin Count :

3

Manufacturer :

Microchip

Drain-source On Resistance-Max :

5Ohm

Drain-Source On-Volt :

60(V)

Polarity/Channel Type :

N-Channel

Package Type :

TO-92

Turn On Delay Time :

10 ns

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Mounting Style :

Through Hole

Transistor Application :

SWITCHING

Number of Elements per Chip :

1

Package Shape :

Round

JEDEC-95 Code :

TO-92

Published :

2008

JESD-30 Code :

O-PBCY-T3

Series :

--

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 25V

Current Rating :

200mA

Brand :

Microchip Technology / Atmel

Power Dissipation-Max :

1W Tc

Voltage - Rated DC :

60V

Feedback Cap-Max (Crss) :

5 pF

Gate-Source Voltage (Max) :

±30(V)

Base Product Number :

2N7000

Qualification :

-

Operating Temperature Classification :

Military

Vgs (Max) :

±30V

Number of Pins :

3

Channel Mode :

Enhancement

Continuous Drain Current Id :

200

Terminal Position :

BOTTOM

Minimum Operating Temperature :

-55 °C

Threshold Voltage :

800mV

JESD-609 Code :

e3

Radiation Hardening :

No

Number of Elements :

1

Supplier Device Package :

TO-92-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1W

Gate to Source Voltage (Vgs) :

30V

Drain Current-Max (Abs) (ID) :

0.2A

Additional Feature :

HIGH INPUT IMPEDANCE

Polarity :

N

Factory Lead Time :

6 Weeks

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Product Category :

MOSFET

Transistor Type :

1 N-Channel

Mounting :

Through Hole

Product Type :

MOSFET

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

200mA Tj

Continuous Drain Current (ID) :

200mA

Surface Mount :

No

MSL :

-

Weight :

453.59237mg

Power Dissipation (Max) :

1W (Tc)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Polarity :

N-Channel

Terminal Form :

THROUGH-HOLE

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Lead Free :

Lead Free

Height :

5.334mm

Rad Hardened :

No

Operating Temperature :

-55°C~150°C TJ

Channel Type :

N

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

10 ns

Product Status :

Active

Length :

5.21mm

Reach Compliance Code :

Compliant

Terminal Finish :

Matte Tin (Sn)

Number of Channels :

1

Peak Reflow Temperature (Cel) :

Not Applicable

Type :

Power MOSFET

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

60 V

Continuous Drain Current :

0.2(A)

Vgs(th) (Max) @ Id :

3V @ 1mA

Maximum Operating Temperature :

+150 °C

RoHS :

Details