2N6849

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

JESD-609 Code :

e0

FET Type :

P-Channel

RoHS Status :

Non-RoHS Compliant

Pin Count :

2

Terminal Position :

BOTTOM

Mount :

Through Hole

Case Connection :

DRAIN

Power Dissipation-Max :

800mW Ta 25W Tc

Drain to Source Voltage (Vdss) :

100V

Power Dissipation :

800mW

Number of Pins :

3

Additional Feature :

High Reliability

Gate Charge (Qg) (Max) @ Vgs :

34.8nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

No

Package / Case :

TO-205AF Metal Can

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Bulk

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

6.5A Tc

Terminal Form :

Wire

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Published :

1997

Number of Elements :

1

Continuous Drain Current (ID) :

6.5A

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

320m Ω @ 6.5A, 10V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Terminal Finish :

TIN LEAD

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON