2N6804

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Packaging :

Bulk

Continuous Drain Current (ID) :

11A

Terminal Form :

PIN/PEG

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

360m Ω @ 11A, 10V

Terminal Position :

BOTTOM

Pin Count :

2

Rise Time :

140ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

1997

Reach Compliance Code :

Unknown

Pbfree Code :

No

Qualification Status :

Not Qualified

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e0

Terminal Finish :

TIN LEAD

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

P-Channel

Number of Elements :

1

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

100V

Package / Case :

TO-204AA, TO-3

Number of Pins :

3

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

4W Ta 75W Tc

Transistor Element Material :

SILICON

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

11A Tc

JESD-30 Code :

O-MBFM-P2

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

100V