2N6804

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Published :

1997

Mount :

Through Hole

Package / Case :

TO-204AA, TO-3

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

JESD-609 Code :

e0

JESD-30 Code :

O-MBFM-P2

Pbfree Code :

No

Rise Time :

140ns

DS Breakdown Voltage-Min :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Power Dissipation-Max :

4W Ta 75W Tc

Case Connection :

DRAIN

Number of Terminations :

2

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

360m Ω @ 11A, 10V

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

11A Tc

ECCN Code :

EAR99

Packaging :

Bulk

Number of Pins :

3

Terminal Form :

PIN/PEG

Drain to Source Voltage (Vdss) :

100V

Terminal Finish :

TIN LEAD

Continuous Drain Current (ID) :

11A

RoHS Status :

Non-RoHS Compliant

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Position :

BOTTOM

Operating Mode :

ENHANCEMENT MODE

Pin Count :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED