2N6804

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Packaging :

Bulk

Power Dissipation-Max :

4W Ta 75W Tc

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

140ns

Published :

1997

Pbfree Code :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Through Hole

Terminal Finish :

TIN LEAD

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Case Connection :

DRAIN

Continuous Drain Current (ID) :

11A

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e0

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Unknown

Number of Terminations :

2

Number of Elements :

1

Terminal Form :

PIN/PEG

JESD-30 Code :

O-MBFM-P2

Pin Count :

2

Number of Pins :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

100V

Terminal Position :

BOTTOM

Vgs (Max) :

±20V

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

100V

Package / Case :

TO-204AA, TO-3

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

Non-RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Rds On (Max) @ Id, Vgs :

360m Ω @ 11A, 10V