2N6800

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Through Hole

Package / Case :

TO-205AF Metal Can

Drain Current-Max (Abs) (ID) :

3A

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Transistor Element Material :

SILICON

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Packaging :

Bulk

Power Dissipation-Max :

800mW Ta 25W Tc

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

400V

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Drain-source On Resistance-Max :

1.1Ohm

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Form :

Wire

Continuous Drain Current (ID) :

3A

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

1 Ω @ 2A, 10V

DS Breakdown Voltage-Min :

400V

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Terminal Position :

BOTTOM

Gate Charge (Qg) (Max) @ Vgs :

5.75nC @ 10V

HTS Code :

8541.21.00.95