2N6800U

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

1 Ω @ 2A, 10V

FET Type :

N-Channel

Continuous Drain Current (ID) :

3A

Gate Charge (Qg) (Max) @ Vgs :

5.75nC @ 10V

RoHS Status :

Non-RoHS Compliant

Turn-Off Delay Time :

35 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

400V

Packaging :

Bulk

Rise Time :

35ns

Radiation Hardening :

No

Turn On Delay Time :

30 ns

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Fall Time (Typ) :

35 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Configuration :

Single

Package / Case :

18-CLCC

Power Dissipation-Max :

800mW Ta 25W Tc

Drain Current-Max (Abs) (ID) :

3A