2N6661

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

Microchip

Gate-Source Voltage (Max) :

±20(V)

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Height :

6.604mm

Power Dissipation-Max :

6.25W Tc

Vgs(th) (Max) @ Id :

2V @ 1mA

Package Type :

TO-39

Rds On (Max) @ Id, Vgs :

4Ohm @ 1A, 10V

Brand :

Microchip Technology / Atmel

Transistor Type :

1 N-Channel

Product Type :

MOSFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Gold

Number of Elements :

1

Polarity :

N

Drain-Source On-Volt :

90(V)

Rds On Max :

4 Ω

RoHS :

Details

Turn-Off Delay Time :

10 ns

Type :

Power MOSFET

Product Category :

MOSFET

Continuous Drain Current Id :

350

Continuous Drain Current :

0.35(A)

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

Mounting Style :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 24V

Configuration :

Single

Package :

Bag

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

90V

Mounting Type :

Through Hole

Threshold Voltage :

800mV

Power Dissipation :

6.25W

Series :

--

FET Type :

N-Channel

Channel Type :

N

Min Operating Temperature :

-55°C

Current - Continuous Drain (Id) @ 25°C :

350mA Tj

Power Dissipation (Max) :

6.25W (Tc)

RoHS Status :

Non-RoHS Compliant

Drain to Source Breakdown Voltage :

90V

Minimum Operating Temperature :

-55 °C

Product Status :

Active

Packaging :

Bulk

Input Capacitance :

50pF

Mounting :

Through Hole

Operating Temperature Classification :

Military

Number of Pins :

3

Turn On Delay Time :

10 ns

Maximum Operating Temperature :

+150 °C

Package / Case :

TO-205AD, TO-39-3 Metal Can

Width :

9.398 Dia.mm

Supplier Device Package :

TO-39

Number of Elements per Chip :

1

Transistor Polarity :

N-Channel

Published :

2010

Gate to Source Voltage (Vgs) :

20V

Subcategory :

MOSFETs

Pin Count :

3

Operating Temp Range :

-55C to 150C

Mount :

Through Hole

Drain to Source Resistance :

4Ohm

Max Operating Temperature :

150°C

Rad Hardened :

No

Channel Mode :

Enhancement

Factory Lead Time :

14 Weeks

Continuous Drain Current (ID) :

350mA

FET Feature :

--

Ambient Temperature Range High :

150°C