2N6660

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Mfr.Part #
2N6660
Manufacturer
Microchip Technology
Package / Case
TO-205AD, TO-39-3 Metal Can
Datasheet
Download
Description
MOSFET N-CH 60V 410MA TO39
Stock
2,151
In Stock :
2,151

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
Non-RoHS Compliant
Surface Mount :
No
Configuration :
Single
JEDEC-95 Code :
TO-39
Drain-source On Resistance-Max :
3 Ω
FET Type :
N-Channel
Transistor Element Material :
SILICON
Element Configuration :
Single
Current :
11A
Drain to Source Breakdown Voltage :
60V
Mount :
Through Hole
Published :
2011
Terminal Position :
BOTTOM
Number of Channels :
1
Feedback Cap-Max (Crss) :
10 pF
JESD-30 Code :
O-MBCY-W3
DS Breakdown Voltage-Min :
60 V
Supplier Device Package :
TO-39
Vgs (Max) :
±20V
Terminal Form :
Wire
Continuous Drain Current (ID) :
410mA
Mounting :
Through Hole
Minimum Operating Temperature :
- 55 C
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Subcategory :
MOSFETs
Type :
Power MOSFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate to Source Voltage (Vgs) :
20V
Power Dissipation-Max (Abs) :
6.25 W
Power Dissipation :
6.25W
ECCN Code :
EAR99
Product Category :
MOSFET
Drain Current-Max (Abs) (ID) :
2 A
Package Type :
TO-39
Operating Temperature Classification :
Military
Drain to Source Resistance :
3Ohm
Radiation Hardening :
No
Packaging :
Bulk
Package :
Bag
Lead Free :
Lead Free
Power Dissipation-Max :
6.25W Tc
Rds On (Max) @ Id, Vgs :
3Ohm @ 1A, 10V
Manufacturer :
Microchip
Gate-Source Voltage (Max) :
±20(V)
Rad Hardened :
No
Brand :
Microchip Technology / Atmel
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Package / Case :
TO-205AD, TO-39-3 Metal Can
Qualification Status :
Not Qualified
Case Connection :
DRAIN
Input Capacitance (Ciss) (Max) @ Vds :
50pF @ 24V
Mounting Type :
Through Hole
Transistor Polarity :
N-Channel
Max Operating Temperature :
150°C
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn On Delay Time :
10 ns
Turn-Off Delay Time :
10 ns
Mounting Style :
Through Hole
Continuous Drain Current Id :
410
Product Type :
MOSFET
Factory Lead Time :
6 Weeks
Polarity :
N
Current - Continuous Drain (Id) @ 25°C :
410mA Ta
Product Status :
Active
Voltage :
60V
FET Feature :
--
Polarity/Channel Type :
N-Channel
Drain to Source Voltage (Vdss) :
60V
Channel Mode :
Enhancement
Power Dissipation (Max) :
6.25W (Tc)
Vgs(th) (Max) @ Id :
2V @ 1mA
Pin Count :
3
Operating Temp Range :
-55C to 150C
Reach Compliance Code :
Compliant
Transistor Type :
1 N-Channel
Package Shape :
Round
Rds On Max :
3 Ω
HTS Code :
8541.90.00.00
Input Capacitance :
50pF
FET Technology :
METAL-OXIDE SEMICONDUCTOR
RoHS :
Details
Terminal Finish :
NICKEL GOLD
Additional Feature :
HIGH INPUT IMPEDANCE
Continuous Drain Current :
0.41(A)
Number of Terminals :
3
Transistor Application :
SWITCHING
Min Operating Temperature :
-55°C
Channel Type :
N
JESD-609 Code :
e4
Drain-Source On-Volt :
60(V)
Contact Plating :
Gold
Maximum Operating Temperature :
+ 150 C
Operating Mode :
ENHANCEMENT MODE
Series :
--
Datasheets
2N6660
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology 2N6660 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Type:Power MOSFET, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-205AD, TO-39-3 Metal Can, Mounting Type:Through Hole, Number of Pins:3, Voltage:60V, 2N6660 pinout, 2N6660 datasheet PDF, 2N6660 amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology 2N6660 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology 2N6660


N-Channel Bulk 3Ohm @ 1A, 10V ±20V 50pF @ 24V 60V TO-205AD, TO-39-3 Metal Can

2N6660 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 50pF @ 24V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.There is no drain current on this device since the maximum continuous current it can conduct is 2 A.As a result of its turn-off delay time, which is 10 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 3Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 60 V, it should remain above the 60 V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (5V 10V).

2N6660 Features


a continuous drain current (ID) of 410mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 10 ns
single MOSFETs transistor is 3Ohm
a 60V drain to source voltage (Vdss)


2N6660 Applications


There are a lot of Microchip Technology
2N6660 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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