2N6660
- Mfr.Part #
- 2N6660
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 410MA TO39
- Stock
- 2,151
- In Stock :
- 2,151
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting :
- Through Hole
- Power Dissipation-Max :
- 6.25W Tc
- Continuous Drain Current Id :
- 410
- RoHS Status :
- Non-RoHS Compliant
- Maximum Operating Temperature :
- + 150 C
- Reach Compliance Code :
- Compliant
- Drain-source On Resistance-Max :
- 3 Ω
- Gate to Source Voltage (Vgs) :
- 20V
- Product Type :
- MOSFET
- Voltage :
- 60V
- Case Connection :
- DRAIN
- Pin Count :
- 3
- Configuration :
- Single
- Max Operating Temperature :
- 150°C
- Product Category :
- MOSFET
- Rad Hardened :
- No
- Drain to Source Voltage (Vdss) :
- 60V
- Transistor Polarity :
- N-Channel
- Surface Mount :
- No
- Continuous Drain Current :
- 0.41(A)
- Turn On Delay Time :
- 10 ns
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Min Operating Temperature :
- -55°C
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Input Capacitance :
- 50pF
- Product Status :
- Active
- Mounting Style :
- Through Hole
- Package :
- Bag
- Polarity :
- N
- Series :
- --
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Packaging :
- Bulk
- Current - Continuous Drain (Id) @ 25°C :
- 410mA Ta
- Turn-Off Delay Time :
- 10 ns
- Continuous Drain Current (ID) :
- 410mA
- Power Dissipation-Max (Abs) :
- 6.25 W
- Current :
- 11A
- Supplier Device Package :
- TO-39
- Number of Channels :
- 1
- Manufacturer :
- Microchip
- RoHS :
- Details
- Factory Lead Time :
- 6 Weeks
- Rds On (Max) @ Id, Vgs :
- 3Ohm @ 1A, 10V
- Operating Temperature Classification :
- Military
- Drain Current-Max (Abs) (ID) :
- 2 A
- Polarity/Channel Type :
- N-Channel
- Channel Type :
- N
- JESD-30 Code :
- O-MBCY-W3
- HTS Code :
- 8541.90.00.00
- Power Dissipation :
- 6.25W
- Channel Mode :
- Enhancement
- Drain to Source Resistance :
- 3Ohm
- Type :
- Power MOSFET
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-39
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation (Max) :
- 6.25W (Tc)
- Brand :
- Microchip Technology / Atmel
- Contact Plating :
- Gold
- FET Feature :
- --
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package Type :
- TO-39
- Drain to Source Breakdown Voltage :
- 60V
- Number of Pins :
- 3
- Minimum Operating Temperature :
- - 55 C
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Package Shape :
- Round
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 24V
- Additional Feature :
- HIGH INPUT IMPEDANCE
- DS Breakdown Voltage-Min :
- 60 V
- Terminal Position :
- BOTTOM
- Vgs (Max) :
- ±20V
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Feedback Cap-Max (Crss) :
- 10 pF
- Number of Terminals :
- 3
- Terminal Finish :
- NICKEL GOLD
- Terminal Form :
- Wire
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-609 Code :
- e4
- Transistor Type :
- 1 N-Channel
- Rds On Max :
- 3 Ω
- Subcategory :
- MOSFETs
- Number of Elements :
- 1
- Published :
- 2011
- Operating Temp Range :
- -55C to 150C
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Drain-Source On-Volt :
- 60(V)
- Transistor Application :
- SWITCHING
- Gate-Source Voltage (Max) :
- ±20(V)
- Datasheets
- 2N6660
N-Channel Bulk 3Ohm @ 1A, 10V ±20V 50pF @ 24V 60V TO-205AD, TO-39-3 Metal Can
2N6660 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 50pF @ 24V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.There is no drain current on this device since the maximum continuous current it can conduct is 2 A.As a result of its turn-off delay time, which is 10 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 3Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 60 V, it should remain above the 60 V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
2N6660 Features
a continuous drain current (ID) of 410mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 10 ns
single MOSFETs transistor is 3Ohm
a 60V drain to source voltage (Vdss)
2N6660 Applications
There are a lot of Microchip Technology
2N6660 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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