2N6660

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting :

Through Hole

Power Dissipation-Max :

6.25W Tc

Continuous Drain Current Id :

410

RoHS Status :

Non-RoHS Compliant

Maximum Operating Temperature :

+ 150 C

Reach Compliance Code :

Compliant

Drain-source On Resistance-Max :

3 Ω

Gate to Source Voltage (Vgs) :

20V

Product Type :

MOSFET

Voltage :

60V

Case Connection :

DRAIN

Pin Count :

3

Configuration :

Single

Max Operating Temperature :

150°C

Product Category :

MOSFET

Rad Hardened :

No

Drain to Source Voltage (Vdss) :

60V

Transistor Polarity :

N-Channel

Surface Mount :

No

Continuous Drain Current :

0.41(A)

Turn On Delay Time :

10 ns

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Min Operating Temperature :

-55°C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-205AD, TO-39-3 Metal Can

Input Capacitance :

50pF

Product Status :

Active

Mounting Style :

Through Hole

Package :

Bag

Polarity :

N

Series :

--

Vgs(th) (Max) @ Id :

2V @ 1mA

Packaging :

Bulk

Current - Continuous Drain (Id) @ 25°C :

410mA Ta

Turn-Off Delay Time :

10 ns

Continuous Drain Current (ID) :

410mA

Power Dissipation-Max (Abs) :

6.25 W

Current :

11A

Supplier Device Package :

TO-39

Number of Channels :

1

Manufacturer :

Microchip

RoHS :

Details

Factory Lead Time :

6 Weeks

Rds On (Max) @ Id, Vgs :

3Ohm @ 1A, 10V

Operating Temperature Classification :

Military

Drain Current-Max (Abs) (ID) :

2 A

Polarity/Channel Type :

N-Channel

Channel Type :

N

JESD-30 Code :

O-MBCY-W3

HTS Code :

8541.90.00.00

Power Dissipation :

6.25W

Channel Mode :

Enhancement

Drain to Source Resistance :

3Ohm

Type :

Power MOSFET

Mount :

Through Hole

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-39

Operating Temperature :

-55°C~150°C TJ

Power Dissipation (Max) :

6.25W (Tc)

Brand :

Microchip Technology / Atmel

Contact Plating :

Gold

FET Feature :

--

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package Type :

TO-39

Drain to Source Breakdown Voltage :

60V

Number of Pins :

3

Minimum Operating Temperature :

- 55 C

Qualification Status :

Not Qualified

FET Type :

N-Channel

Element Configuration :

Single

Package Shape :

Round

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 24V

Additional Feature :

HIGH INPUT IMPEDANCE

DS Breakdown Voltage-Min :

60 V

Terminal Position :

BOTTOM

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Radiation Hardening :

No

Feedback Cap-Max (Crss) :

10 pF

Number of Terminals :

3

Terminal Finish :

NICKEL GOLD

Terminal Form :

Wire

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e4

Transistor Type :

1 N-Channel

Rds On Max :

3 Ω

Subcategory :

MOSFETs

Number of Elements :

1

Published :

2011

Operating Temp Range :

-55C to 150C

Lead Free :

Lead Free

ECCN Code :

EAR99

Drain-Source On-Volt :

60(V)

Transistor Application :

SWITCHING

Gate-Source Voltage (Max) :

±20(V)