2N6660

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

FET Feature :

--

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reach Compliance Code :

Compliant

Brand :

Microchip Technology / Atmel

Power Dissipation-Max :

6.25W Tc

Contact Plating :

Gold

Drain Current-Max (Abs) (ID) :

2 A

Power Dissipation-Max (Abs) :

6.25 W

Transistor Type :

1 N-Channel

JESD-609 Code :

e4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current :

0.41(A)

Max Operating Temperature :

150°C

Vgs(th) (Max) @ Id :

2V @ 1mA

Terminal Position :

BOTTOM

Package Type :

TO-39

FET Type :

N-Channel

Turn-Off Delay Time :

10 ns

Voltage :

60V

Transistor Element Material :

SILICON

Channel Type :

N

Packaging :

Bulk

Number of Terminals :

3

Series :

--

Manufacturer :

Microchip

DS Breakdown Voltage-Min :

60 V

Operating Temperature Classification :

Military

Factory Lead Time :

6 Weeks

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Mounting :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

410mA Ta

Current :

11A

RoHS :

Details

Drain to Source Breakdown Voltage :

60V

Type :

Power MOSFET

Published :

2011

Drain to Source Voltage (Vdss) :

60V

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 24V

Maximum Operating Temperature :

+ 150 C

Product Status :

Active

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Mounting Style :

Through Hole

Pin Count :

3

Drain-source On Resistance-Max :

3 Ω

Rad Hardened :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

Single

Feedback Cap-Max (Crss) :

10 pF

Terminal Finish :

NICKEL GOLD

Min Operating Temperature :

-55°C

JESD-30 Code :

O-MBCY-W3

Turn On Delay Time :

10 ns

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Surface Mount :

No

Transistor Polarity :

N-Channel

Supplier Device Package :

TO-39

Lead Free :

Lead Free

Number of Pins :

3

HTS Code :

8541.90.00.00

Polarity/Channel Type :

N-Channel

Drain to Source Resistance :

3Ohm

Continuous Drain Current (ID) :

410mA

Power Dissipation (Max) :

6.25W (Tc)

Terminal Form :

Wire

Rds On Max :

3 Ω

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

3Ohm @ 1A, 10V

Channel Mode :

Enhancement

Package :

Bag

Vgs (Max) :

±20V

Minimum Operating Temperature :

- 55 C

Subcategory :

MOSFETs

Polarity :

N

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Continuous Drain Current Id :

410

Radiation Hardening :

No

Input Capacitance :

50pF

Product Type :

MOSFET

Mounting Type :

Through Hole

Package / Case :

TO-205AD, TO-39-3 Metal Can

Element Configuration :

Single

Power Dissipation :

6.25W

Product Category :

MOSFET

Operating Mode :

ENHANCEMENT MODE

Drain-Source On-Volt :

60(V)

Number of Channels :

1

Gate-Source Voltage (Max) :

±20(V)

Package Shape :

Round

Operating Temp Range :

-55C to 150C

JEDEC-95 Code :

TO-39

Additional Feature :

HIGH INPUT IMPEDANCE

Transistor Application :

SWITCHING