2N6660

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

60 V

Drain-Source On-Volt :

60(V)

Package :

Bag

Contact Plating :

Gold

Mount :

Through Hole

FET Feature :

--

Mounting :

Through Hole

Element Configuration :

Single

Power Dissipation :

6.25W

Gate-Source Voltage (Max) :

±20(V)

Transistor Polarity :

N-Channel

Terminal Position :

BOTTOM

Maximum Operating Temperature :

+ 150 C

Drain Current-Max (Abs) (ID) :

2 A

FET Type :

N-Channel

Brand :

Microchip Technology / Atmel

Number of Channels :

1

Rad Hardened :

No

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Polarity :

N

Number of Terminals :

3

Qualification Status :

Not Qualified

Package Type :

TO-39

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2011

Case Connection :

DRAIN

Min Operating Temperature :

-55°C

Terminal Finish :

NICKEL GOLD

Manufacturer :

Microchip

Reach Compliance Code :

Compliant

Product Status :

Active

Turn-Off Delay Time :

10 ns

Polarity/Channel Type :

N-Channel

Terminal Form :

Wire

Factory Lead Time :

6 Weeks

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

410mA Ta

Minimum Operating Temperature :

- 55 C

Power Dissipation (Max) :

6.25W (Tc)

Vgs(th) (Max) @ Id :

2V @ 1mA

Surface Mount :

No

Packaging :

Bulk

Continuous Drain Current :

0.41(A)

Turn On Delay Time :

10 ns

Operating Mode :

ENHANCEMENT MODE

Subcategory :

MOSFETs

Pin Count :

3

Feedback Cap-Max (Crss) :

10 pF

Voltage :

60V

HTS Code :

8541.90.00.00

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 24V

JEDEC-95 Code :

TO-39

Power Dissipation-Max :

6.25W Tc

Drain-source On Resistance-Max :

3 Ω

Drain to Source Resistance :

3Ohm

Product Category :

MOSFET

Mounting Style :

Through Hole

Transistor Type :

1 N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Additional Feature :

HIGH INPUT IMPEDANCE

RoHS :

Details

Lead Free :

Lead Free

Continuous Drain Current (ID) :

410mA

Type :

Power MOSFET

Series :

--

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

60V

JESD-609 Code :

e4

Transistor Application :

SWITCHING

Power Dissipation-Max (Abs) :

6.25 W

Rds On (Max) @ Id, Vgs :

3Ohm @ 1A, 10V

Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Rds On Max :

3 Ω

Drain to Source Breakdown Voltage :

60V

Vgs (Max) :

±20V

Operating Temp Range :

-55C to 150C

Product Type :

MOSFET

Max Operating Temperature :

150°C

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance :

50pF

ECCN Code :

EAR99

Mounting Type :

Through Hole

JESD-30 Code :

O-MBCY-W3

Current :

11A

Operating Temperature Classification :

Military

RoHS Status :

Non-RoHS Compliant

Continuous Drain Current Id :

410

Package Shape :

Round

Supplier Device Package :

TO-39

Package / Case :

TO-205AD, TO-39-3 Metal Can

Channel Mode :

Enhancement

Channel Type :

N