2N6660

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Mfr.Part #
2N6660
Manufacturer
Microchip Technology
Package / Case
TO-205AD, TO-39-3 Metal Can
Datasheet
Download
Description
MOSFET N-CH 60V 410MA TO39
Stock
2,151
In Stock :
2,151

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
Wire
HTS Code :
8541.90.00.00
Minimum Operating Temperature :
- 55 C
Continuous Drain Current (ID) :
410mA
Transistor Type :
1 N-Channel
Product Category :
MOSFET
Transistor Element Material :
SILICON
Power Dissipation-Max (Abs) :
6.25 W
Subcategory :
MOSFETs
Number of Channels :
1
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e4
Voltage :
60V
Supplier Device Package :
TO-39
Feedback Cap-Max (Crss) :
10 pF
Drain to Source Breakdown Voltage :
60V
Pin Count :
3
Input Capacitance :
50pF
Polarity/Channel Type :
N-Channel
Published :
2011
Packaging :
Bulk
Number of Elements :
1
Power Dissipation-Max :
6.25W Tc
Series :
--
Radiation Hardening :
No
Operating Temp Range :
-55C to 150C
Rds On Max :
3 Ω
Input Capacitance (Ciss) (Max) @ Vds :
50pF @ 24V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
JEDEC-95 Code :
TO-39
Mounting :
Through Hole
Vgs (Max) :
±20V
Mounting Type :
Through Hole
Terminal Finish :
NICKEL GOLD
Power Dissipation (Max) :
6.25W (Tc)
Current - Continuous Drain (Id) @ 25°C :
410mA Ta
Operating Temperature Classification :
Military
Manufacturer :
Microchip
Package Shape :
Round
Vgs(th) (Max) @ Id :
2V @ 1mA
Mounting Style :
Through Hole
Turn-Off Delay Time :
10 ns
Polarity :
N
Drain-source On Resistance-Max :
3 Ω
Transistor Polarity :
N-Channel
Max Operating Temperature :
150°C
Product Status :
Active
DS Breakdown Voltage-Min :
60 V
Product Type :
MOSFET
Rds On (Max) @ Id, Vgs :
3Ohm @ 1A, 10V
Drain to Source Resistance :
3Ohm
Channel Type :
N
Reach Compliance Code :
Compliant
Surface Mount :
No
Rad Hardened :
No
Additional Feature :
HIGH INPUT IMPEDANCE
Min Operating Temperature :
-55°C
JESD-30 Code :
O-MBCY-W3
FET Type :
N-Channel
FET Feature :
--
Operating Temperature :
-55°C~150°C TJ
RoHS :
Details
Number of Pins :
3
Gate-Source Voltage (Max) :
±20(V)
RoHS Status :
Non-RoHS Compliant
Package Type :
TO-39
Element Configuration :
Single
Qualification Status :
Not Qualified
Turn On Delay Time :
10 ns
Gate to Source Voltage (Vgs) :
20V
Contact Plating :
Gold
Case Connection :
DRAIN
Configuration :
Single
Factory Lead Time :
6 Weeks
Drain-Source On-Volt :
60(V)
Current :
11A
Brand :
Microchip Technology / Atmel
Package :
Bag
Continuous Drain Current Id :
410
Package / Case :
TO-205AD, TO-39-3 Metal Can
ECCN Code :
EAR99
Transistor Application :
SWITCHING
Channel Mode :
Enhancement
Drain to Source Voltage (Vdss) :
60V
Continuous Drain Current :
0.41(A)
Mount :
Through Hole
Number of Terminals :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation :
6.25W
Type :
Power MOSFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Maximum Operating Temperature :
+ 150 C
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Terminal Position :
BOTTOM
Drain Current-Max (Abs) (ID) :
2 A
Datasheets
2N6660
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology 2N6660 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Voltage:60V, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-205AD, TO-39-3 Metal Can, Type:Power MOSFET, 2N6660 pinout, 2N6660 datasheet PDF, 2N6660 amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology 2N6660 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology 2N6660


N-Channel Bulk 3Ohm @ 1A, 10V ±20V 50pF @ 24V 60V TO-205AD, TO-39-3 Metal Can

2N6660 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 50pF @ 24V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.There is no drain current on this device since the maximum continuous current it can conduct is 2 A.As a result of its turn-off delay time, which is 10 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 3Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 60 V, it should remain above the 60 V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (5V 10V).

2N6660 Features


a continuous drain current (ID) of 410mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 10 ns
single MOSFETs transistor is 3Ohm
a 60V drain to source voltage (Vdss)


2N6660 Applications


There are a lot of Microchip Technology
2N6660 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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