2N6660

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Bag

Terminal Finish :

NICKEL GOLD

Gate-Source Voltage (Max) :

±20(V)

Voltage :

60V

Transistor Type :

1 N-Channel

Continuous Drain Current Id :

410

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

2 A

Reach Compliance Code :

Compliant

Mounting :

Through Hole

Number of Elements :

1

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-39

Lead Free :

Lead Free

Input Capacitance :

50pF

ECCN Code :

EAR99

Type :

Power MOSFET

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Published :

2011

Power Dissipation-Max :

6.25W Tc

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

410mA

Channel Mode :

Enhancement

Turn On Delay Time :

10 ns

HTS Code :

8541.90.00.00

Factory Lead Time :

6 Weeks

Brand :

Microchip Technology / Atmel

Rad Hardened :

No

Feedback Cap-Max (Crss) :

10 pF

Terminal Form :

Wire

Additional Feature :

HIGH INPUT IMPEDANCE

Surface Mount :

No

Turn-Off Delay Time :

10 ns

Power Dissipation-Max (Abs) :

6.25 W

Terminal Position :

BOTTOM

Package Type :

TO-39

Operating Temperature Classification :

Military

Max Operating Temperature :

150°C

Number of Terminals :

3

Power Dissipation (Max) :

6.25W (Tc)

JESD-609 Code :

e4

Polarity :

N

Configuration :

Single

Rds On (Max) @ Id, Vgs :

3Ohm @ 1A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Manufacturer :

Microchip

Operating Temp Range :

-55C to 150C

Min Operating Temperature :

-55°C

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Rds On Max :

3 Ω

FET Feature :

--

Drain-source On Resistance-Max :

3 Ω

Qualification Status :

Not Qualified

Product Status :

Active

Case Connection :

DRAIN

Minimum Operating Temperature :

- 55 C

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Channel Type :

N

Package Shape :

Round

Series :

--

Drain to Source Voltage (Vdss) :

60V

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 24V

Mount :

Through Hole

Supplier Device Package :

TO-39

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Current :

11A

Polarity/Channel Type :

N-Channel

DS Breakdown Voltage-Min :

60 V

Drain-Source On-Volt :

60(V)

Drain to Source Resistance :

3Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Channels :

1

Subcategory :

MOSFETs

Power Dissipation :

6.25W

JESD-30 Code :

O-MBCY-W3

Radiation Hardening :

No

Continuous Drain Current :

0.41(A)

Transistor Polarity :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Mounting Style :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

410mA Ta

Element Configuration :

Single

Packaging :

Bulk

Product Category :

MOSFET

Contact Plating :

Gold

Vgs(th) (Max) @ Id :

2V @ 1mA

Pin Count :

3

Product Type :

MOSFET

RoHS :

Details

Maximum Operating Temperature :

+ 150 C

Package / Case :

TO-205AD, TO-39-3 Metal Can

Drain to Source Breakdown Voltage :

60V