2N6660-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

BOTTOM

Factory Lead Time :

9 Weeks

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

725mW

Element Configuration :

Single

REACH SVHC :

Unknown

Rds On (Max) @ Id, Vgs :

3 Ω @ 1A, 10V

Height :

6.6mm

Width :

8.15mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOW THRESHOLD

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

60V

Transistor Element Material :

SILICON

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Terminal Form :

Wire

Continuous Drain Current (ID) :

1.1A

Nominal Vgs :

1.7 V

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Pin Count :

2

FET Type :

N-Channel

JESD-609 Code :

e3

Threshold Voltage :

1.7V

Published :

2007

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

3

Transistor Application :

AMPLIFIER

Drain-source On Resistance-Max :

3Ohm

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Mount :

Through Hole

Drain Current-Max (Abs) (ID) :

0.99A

Vgs(th) (Max) @ Id :

2V @ 1mA

Number of Elements :

1

Mounting Type :

Through Hole

Number of Channels :

1

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

990mA Tc

Power Dissipation-Max :

725mW Ta 6.25W Tc

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-205AD, TO-39-3 Metal Can

Vgs (Max) :

±20V

Length :

9.4mm

Packaging :

Bulk