2N5401RLRMG

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Mfr.Part #
2N5401RLRMG
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS PNP 150V 0.6A TO92
Stock
40,454
In Stock :
40,454

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Pbfree Code :
yes
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
3
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Frequency - Transition :
300MHz
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 10mA 5V
Time@Peak Reflow Temperature-Max (s) :
40
Terminal Position :
BOTTOM
Reach Compliance Code :
Unknown
Configuration :
Single
Transition Frequency :
100MHz
Mounting Type :
Through Hole
Power - Max :
625mW
Number of Elements :
1
JESD-609 Code :
e1
Vce Saturation (Max) @ Ib, Ic :
500mV @ 5mA, 50mA
Packaging :
Tape and Box (TB)
Qualification Status :
COMMERCIAL
Polarity/Channel Type :
PNP
Transistor Application :
AMPLIFIER
Peak Reflow Temperature (Cel) :
260
Voltage - Collector Emitter Breakdown (Max) :
150V
JESD-30 Code :
O-PBCY-T3
Surface Mount :
No
Terminal Finish :
TIN SILVER COPPER
Current - Collector Cutoff (Max) :
50nA ICBO
Current - Collector (Ic) (Max) :
600mA
RoHS Status :
ROHS3 Compliant
Transistor Type :
PNP
Transistor Element Material :
SILICON
Datasheets
2N5401RLRMG
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N5401RLRMG from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Mounting Type:Through Hole, 2N5401RLRMG pinout, 2N5401RLRMG datasheet PDF, 2N5401RLRMG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N5401RLRMG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N5401RLRMG


PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

2N5401RLRMG Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 10mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 5mA, 50mA.The part has a transition frequency of 100MHz.Device displays Collector Emitter Breakdown (150V maximal voltage).

2N5401RLRMG Features


the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
a transition frequency of 100MHz


2N5401RLRMG Applications


There are a lot of Rochester Electronics, LLC
2N5401RLRMG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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