2N5400RLRP

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e0

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 10mA 5V

Pin Count :

3

RoHS Status :

Non-RoHS Compliant

Collector Base Voltage (VCBO) :

-160V

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Collector Emitter Saturation Voltage :

-500mV

hFE Min :

30

Emitter Base Voltage (VEBO) :

5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain Bandwidth Product :

400MHz

Terminal Position :

BOTTOM

Qualification Status :

Not Qualified

Lead Free :

Contains Lead

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Number of Pins :

3

HTS Code :

8541.21.00.95

Collector Emitter Breakdown Voltage :

120V

Collector Emitter Voltage (VCEO) :

500mV

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Current Rating :

-600mA

Max Power Dissipation :

625mW

Current - Collector (Ic) (Max) :

600mA

Reach Compliance Code :

not_compliant

Polarity/Channel Type :

PNP

Voltage - Rated DC :

-120V

Mount :

Through Hole

Terminal Finish :

Tin/Lead (Sn/Pb)

Transistor Application :

AMPLIFIER

Max Collector Current :

600mA

Peak Reflow Temperature (Cel) :

240

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

100nA ICBO

Base Part Number :

2N5400

Transistor Type :

PNP

Published :

2007

Transition Frequency :

100MHz

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)