2N5400RLRP
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- Mfr.Part #
- 2N5400RLRP
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.6A TO92
- Stock
- 49,697
- In Stock ：
- 49,697
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Reach Compliance Code :
- not_compliant
- Pin Count :
- 3
- Transistor Application :
- AMPLIFIER
- Max Collector Current :
- 600mA
- Collector Emitter Saturation Voltage :
- -500mV
- Collector Base Voltage (VCBO) :
- -160V
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 120V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Rated DC :
- -120V
- Transition Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -600mA
- Current - Collector (Ic) (Max) :
- 600mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA 5V
- Peak Reflow Temperature (Cel) :
- 240
- hFE Min :
- 30
- Packaging :
- Tape and Reel (TR)
- Mount :
- Through Hole
- Max Power Dissipation :
- 625mW
- Gain Bandwidth Product :
- 400MHz
- Collector Emitter Voltage (VCEO) :
- 500mV
- HTS Code :
- 8541.21.00.95
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Published :
- 2007
- JESD-609 Code :
- e0
- Base Part Number :
- 2N5400
- Terminal Position :
- BOTTOM
- RoHS Status :
- Non-RoHS Compliant
- Lead Free :
- Contains Lead
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Datasheets
- 2N5400RLRP
2N5400RLRP Documents
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N5400RLRP Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 10mA 5V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -600mA.A transition frequency of 100MHz is present in the part.Collector current can be as low as 600mA volts at its maximum.
2N5400RLRP Features
the DC current gain for this device is 40 @ 10mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 100MHz
2N5400RLRP Applications
There are a lot of ON Semiconductor
2N5400RLRP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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