2N5401BU
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- Mfr.Part #
- 2N5401BU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.6A TO-92
- Stock
- 6,600
- In Stock ：
- 6,600
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 300MHz
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 3
- Power - Max :
- 625mW
- Current Rating :
- -600mA
- Current - Collector (Ic) (Max) :
- 600mA
- Power Dissipation :
- 625mW
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Frequency - Transition :
- 400MHz
- Frequency :
- 400MHz
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Min Operating Temperature :
- -55°C
- Max Frequency :
- 400MHz
- Published :
- 2004
- REACH SVHC :
- No SVHC
- Weight :
- 178.2mg
- Element Configuration :
- Single
- Polarity :
- PNP
- Number of Elements :
- 1
- Supplier Device Package :
- TO-92-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 625mW
- Max Operating Temperature :
- 150°C
- Collector Emitter Voltage (VCEO) :
- 150V
- Collector Emitter Breakdown Voltage :
- 150V
- Base Part Number :
- 2N5401
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 160V
- hFE Min :
- 60
- Mount :
- Through Hole
- Transistor Type :
- PNP
- Voltage - Collector Emitter Breakdown (Max) :
- 150V
- Max Collector Current :
- 600mA
- Voltage - Rated DC :
- -150V
- Datasheets
- 2N5401BU
,TO-226_straightlead.jpg)
PNP -55°C~150°C TJ 50nA ICBO 1 Elements TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N5401BU Overview
DC current gain in this device equals 60 @ 10mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 5mA, 50mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -600mA current rating.Product comes in TO-92-3 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 600mA volts.
2N5401BU Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
the supplier device package of TO-92-3
2N5401BU Applications
There are a lot of ON Semiconductor
2N5401BU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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