2N5346
- Mfr.Part #
- 2N5346
- Manufacturer
- Microchip Technology
- Package / Case
- TO-210AA, TO-59-4, Stud
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 3,487
- In Stock :
- 3,487
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector-Emitter Voltage-Max :
- 80 V
- Terminal Form :
- Solder Lug
- Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- -
- Operating Temperature :
- -
- Power - Max :
- 60 W
- VCEsat-Max :
- 0.7 V
- Reach Compliance Code :
- Compliant
- Supplier Device Package :
- TO-59
- Manufacturer :
- Microchip
- Number of Terminals :
- 4
- Terminal Position :
- UPPER
- Package :
- Bulk
- Product Status :
- Active
- Transistor Type :
- PNP
- DC Current Gain-Min (hFE) :
- 30
- Current - Collector (Ic) (Max) :
- 7 A
- Frequency - Transition :
- -
- Transistor Element Material :
- SILICON
- Technology :
- Si
- Brand :
- Microchip Technology
- Polarity/Channel Type :
- NPN
- Series :
- -
- Product Type :
- BJTs - Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Qualification Status :
- Not Qualified
- Case Connection :
- Isolated
- JEDEC-95 Code :
- TO-111
- Power Dissipation-Max (Abs) :
- 60 W
- Collector Current-Max (IC) :
- 7 A
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Surface Mount :
- No
- Package Shape :
- Round
- JESD-30 Code :
- O-MUPM-D4
- Package / Case :
- TO-210AA, TO-59-4, Stud
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Transistor Polarity :
- NPN
- Product Category :
- Bipolar Transistors - BJT
- Mounting Type :
- Stud Mount
- Current - Collector Cutoff (Max) :
- -
- Subcategory :
- Transistors
- Datasheets
- 2N5346
PNP - - 1 Elements SILICON NPN TO-210AA, TO-59-4, Stud Stud Mount
2N5346 Overview
This device has a DC current gain of -, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-59.Maximum collector-emitter voltage can be set to 80 V.Detection of Collector Emitter Breakdown at 80 V maximal voltage is present.
2N5346 Features
the DC current gain for this device is -
the vce saturation(Max) is -
the supplier device package of TO-59
2N5346 Applications
There are a lot of Microchip Technology
2N5346 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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