2N5306 TIN/LEAD
- Mfr.Part #
- 2N5306 TIN/LEAD
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN DARL 25V 0.3A TO92-3
- Stock
- 4,716
- In Stock :
- 4,716
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 60MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 7000 @ 2mA 5V
- Transistor Type :
- NPN - Darlington
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- Power - Max :
- 625mW
- RoHS Status :
- Non-RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 1.4V @ 200μA, 200mA
- JESD-609 Code :
- e0
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Current - Collector (Ic) (Max) :
- 300mA
- Operating Temperature :
- -65°C~150°C TJ
- Terminal Finish :
- TIN LEAD
- Datasheets
- 2N5306 TIN/LEAD
NPN - Darlington -65°C~150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N5306 TIN/LEAD Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 7000 @ 2mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor shows a 25V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2N5306 TIN/LEAD Features
the DC current gain for this device is 7000 @ 2mA 5V
the vce saturation(Max) is 1.4V @ 200μA, 200mA
2N5306 TIN/LEAD Applications
There are a lot of Central Semiconductor Corp
2N5306 TIN/LEAD applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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