2N5302G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Case Connection :

COLLECTOR

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 15A 2V

Voltage - Rated DC :

60V

Radiation Hardening :

No

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Surface Mount :

No

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Current - Collector Cutoff (Max) :

5mA

Lead Free :

Lead Free

Mounting Type :

Through Hole

Package / Case :

TO-204AA, TO-3

Number of Terminations :

2

Collector Base Voltage (VCBO) :

60V

Terminal Form :

PIN/PEG

Power Dissipation :

200W

Factory Lead Time :

2 Weeks

Element Configuration :

Single

Weight :

13.607771g

Collector Emitter Saturation Voltage :

750mV

Collector Emitter Voltage (VCEO) :

60V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

30A

Length :

38.1mm

Transistor Element Material :

SILICON

Pbfree Code :

yes

Terminal Position :

BOTTOM

Transistor Type :

NPN

Peak Reflow Temperature (Cel) :

260

Frequency :

2MHz

Transition Frequency :

2MHz

Width :

25.4mm

Collector Emitter Breakdown Voltage :

60V

Height :

25.4mm

Published :

2006

hFE Min :

15

Terminal Finish :

Tin (Sn)

Polarity/Channel Type :

NPN

REACH SVHC :

No SVHC

Pin Count :

2

Transistor Application :

SWITCHING

Number of Pins :

2

Base Part Number :

2N5302

Max Power Dissipation :

200W

Packaging :

Tray

ECCN Code :

EAR99

Max Collector Current :

30A

JESD-609 Code :

e3

Operating Temperature :

-65°C~200°C TJ

Gain Bandwidth Product :

2MHz

Vce Saturation (Max) @ Ib, Ic :

3V @ 6A, 30A