2N5302G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Pbfree Code :

yes

JESD-609 Code :

e3

Terminal Form :

PIN/PEG

Max Collector Current :

30A

Lead Free :

Lead Free

Frequency :

2MHz

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

60V

ECCN Code :

EAR99

Power Dissipation :

200W

Weight :

13.607771g

Collector Base Voltage (VCBO) :

60V

Pin Count :

2

Current Rating :

30A

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

5mA

Vce Saturation (Max) @ Ib, Ic :

3V @ 6A, 30A

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Operating Temperature :

-65°C~200°C TJ

Packaging :

Tray

Surface Mount :

No

Element Configuration :

Single

Height :

25.4mm

Voltage - Rated DC :

60V

Package / Case :

TO-204AA, TO-3

Radiation Hardening :

No

Mounting Type :

Through Hole

Factory Lead Time :

2 Weeks

Published :

2006

Transition Frequency :

2MHz

Case Connection :

COLLECTOR

Length :

38.1mm

Collector Emitter Saturation Voltage :

750mV

Gain Bandwidth Product :

2MHz

Width :

25.4mm

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

BOTTOM

Polarity/Channel Type :

NPN

Number of Pins :

2

Number of Terminations :

2

Transistor Application :

SWITCHING

Max Power Dissipation :

200W

Collector Emitter Breakdown Voltage :

60V

Peak Reflow Temperature (Cel) :

260

Base Part Number :

2N5302

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 15A 2V

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

hFE Min :

15