2N5302G
- Mfr.Part #
- 2N5302G
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 30A TO204
- Stock
- 15,135
- In Stock :
- 15,135
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 15A 2V
- Voltage - Rated DC :
- 60V
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Surface Mount :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Current - Collector Cutoff (Max) :
- 5mA
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Package / Case :
- TO-204AA, TO-3
- Number of Terminations :
- 2
- Collector Base Voltage (VCBO) :
- 60V
- Terminal Form :
- PIN/PEG
- Power Dissipation :
- 200W
- Factory Lead Time :
- 2 Weeks
- Element Configuration :
- Single
- Weight :
- 13.607771g
- Collector Emitter Saturation Voltage :
- 750mV
- Collector Emitter Voltage (VCEO) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 30A
- Length :
- 38.1mm
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Terminal Position :
- BOTTOM
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 2MHz
- Transition Frequency :
- 2MHz
- Width :
- 25.4mm
- Collector Emitter Breakdown Voltage :
- 60V
- Height :
- 25.4mm
- Published :
- 2006
- hFE Min :
- 15
- Terminal Finish :
- Tin (Sn)
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- Pin Count :
- 2
- Transistor Application :
- SWITCHING
- Number of Pins :
- 2
- Base Part Number :
- 2N5302
- Max Power Dissipation :
- 200W
- Packaging :
- Tray
- ECCN Code :
- EAR99
- Max Collector Current :
- 30A
- JESD-609 Code :
- e3
- Operating Temperature :
- -65°C~200°C TJ
- Gain Bandwidth Product :
- 2MHz
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 6A, 30A
- Datasheets
- 2N5302G

NPN -65°C~200°C TJ 5mA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
2N5302G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 15A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 750mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 6A, 30A.The current rating of this fuse is 30A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 2MHz.Single BJT transistor is possible to have a collector current as low as 30A volts at Single BJT transistors maximum.
2N5302G Features
the DC current gain for this device is 15 @ 15A 2V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 3V @ 6A, 30A
the current rating of this device is 30A
a transition frequency of 2MHz
2N5302G Applications
There are a lot of ON Semiconductor
2N5302G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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