2N5288
- Mfr.Part #
- 2N5288
- Manufacturer
- Microchip Technology
- Package / Case
- TO-211MA, TO-210AC, TO-61-4, Stud
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 17,789
- In Stock :
- 17,789
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Mounting Type :
- Stud Mount
- Case Connection :
- Isolated
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- VCEsat-Max :
- 0.9 V
- Technology :
- Si
- ECCN Code :
- EAR99
- Manufacturer :
- Solitron Devices Inc
- Transistor Polarity :
- NPN
- Current - Collector (Ic) (Max) :
- 10 A
- Collector Current-Max (IC) :
- 10 A
- Package Shape :
- Round
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Series :
- -
- Transistor Element Material :
- SILICON
- Collector-Emitter Voltage-Max :
- 100 V
- Surface Mount :
- No
- Terminal Form :
- Solder Lug
- Qualification Status :
- Not Qualified
- Configuration :
- Single
- Number of Terminals :
- 3
- DC Current Gain-Min (hFE) :
- 30
- JESD-30 Code :
- O-MUPM-D3
- Package :
- Bulk
- Current - Collector Cutoff (Max) :
- -
- Power - Max :
- 116 W
- Transistor Type :
- NPN
- Pbfree Code :
- No
- Supplier Device Package :
- TO-61
- Package / Case :
- TO-211MA, TO-210AC, TO-61-4, Stud
- Subcategory :
- Other Transistors
- Frequency - Transition :
- -
- Reach Compliance Code :
- Unknown
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 500μA, 5mA
- Number of Elements :
- 1
- Product Status :
- Active
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Polarity/Channel Type :
- NPN
- Power Dissipation Ambient-Max :
- 116 W
- Terminal Position :
- UPPER
- Power Dissipation-Max (Abs) :
- 100 W
- Datasheets
- 2N5288
NPN -65°C ~ 200°C (TJ) - 1 Elements SILICON NPN TO-211MA, TO-210AC, TO-61-4, Stud Stud Mount
2N5288 Overview
DC current gain in this device equals -, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 900mV @ 500μA, 5mA.Product comes in TO-61 supplier package.Maximal collector-emitter voltage can be set at 100 V.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2N5288 Features
the DC current gain for this device is -
the vce saturation(Max) is 900mV @ 500μA, 5mA
the supplier device package of TO-61
2N5288 Applications
There are a lot of Microchip Technology
2N5288 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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