2N5210TFR
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- Mfr.Part #
- 2N5210TFR
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A TO92-3
- Stock
- 35,089
- In Stock ：
- 35,089
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 625mW
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100μA 5V
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Frequency - Transition :
- 30MHz
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- RoHS Status :
- Non-RoHS Compliant
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 100mA
- Supplier Device Package :
- TO-92-3
- Datasheets
- 2N5210TFR
NPN -55°C~150°C TJ 50nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N5210TFR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100μA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 1mA, 10mA.TO-92-3 is the supplier device package for this product.This device displays a 50V maximum voltage - Collector Emitter Breakdown.
2N5210TFR Features
the DC current gain for this device is 200 @ 100μA 5V
the vce saturation(Max) is 700mV @ 1mA, 10mA
the supplier device package of TO-92-3
2N5210TFR Applications
There are a lot of Rochester Electronics, LLC
2N5210TFR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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