2N5210TA
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- Mfr.Part #
- 2N5210TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A TO92-3
- Stock
- 39,930
- In Stock ：
- 39,930
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 240mg
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Pins :
- 3
- Transition Frequency :
- 30MHz
- Packaging :
- Tape and Box (TB)
- Max Collector Current :
- 100mA
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100μA 5V
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 50V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Terminal Position :
- BOTTOM
- Frequency :
- 30MHz
- hFE Min :
- 200
- RoHS Status :
- RoHS Compliant
- Factory Lead Time :
- 6 Weeks
- Transistor Type :
- NPN
- Max Power Dissipation :
- 625mW
- Gain Bandwidth Product :
- 30MHz
- Pbfree Code :
- yes
- Height :
- 5.33mm
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 3
- Base Part Number :
- 2N5210
- Width :
- 4.19mm
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 625mW
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 1mA, 10mA
- Max Breakdown Voltage :
- 45V
- Voltage - Rated DC :
- 50V
- Collector Emitter Saturation Voltage :
- 700mV
- Length :
- 5.2mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current Rating :
- 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 50V
- Emitter Base Voltage (VEBO) :
- 4.5V
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Published :
- 2002
- Datasheets
- 2N5210TA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N5210TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100μA 5V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4.5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 30MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
2N5210TA Features
the DC current gain for this device is 200 @ 100μA 5V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 100mA
a transition frequency of 30MHz
2N5210TA Applications
There are a lot of ON Semiconductor
2N5210TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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