2N3439L
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- Mfr.Part #
- 2N3439L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 350V 1A TO5
- Stock
- 33,685
- In Stock ：
- 33,685
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Terminal Finish :
- TIN LEAD
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Wire
- Collector Base Voltage (VCBO) :
- 450V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- Published :
- 2007
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- Single
- Max Collector Current :
- 1A
- Terminal Position :
- BOTTOM
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Operating Temperature :
- -65°C~200°C TJ
- Number of Elements :
- 1
- Power Dissipation :
- 800mW
- Current - Collector Cutoff (Max) :
- 2µA
- Pin Count :
- 3
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- JESD-609 Code :
- e0
- Number of Terminations :
- 3
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA 10V
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 23 Weeks
- Collector Emitter Voltage (VCEO) :
- 500mV
- Collector Emitter Breakdown Voltage :
- 350V
- Transistor Type :
- NPN
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 800mW
- Packaging :
- Bulk
- Emitter Base Voltage (VEBO) :
- 7V
- Datasheets
- 2N3439L
NPN -65°C~200°C TJ 2μA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
2N3439L Overview
This device has a DC current gain of 40 @ 20mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 4mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.A maximum collector current of 1A volts is possible.
2N3439L Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
2N3439L Applications
There are a lot of Microsemi Corporation
2N3439L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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