2N2219A
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- Mfr.Part #
- 2N2219A
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.8A TO39
- Stock
- 208
- In Stock ：
- 208
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 50V
- Factory Lead Time :
- 8 Weeks
- Max Collector Current :
- 800mA
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 3
- Power Dissipation :
- 800mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 10nA
- RoHS Status :
- Non-RoHS Compliant
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Packaging :
- Bulk
- Transistor Type :
- NPN
- Polarity :
- NPN
- Collector Emitter Voltage (VCEO) :
- 50V
- Min Operating Temperature :
- -55°C
- Supplier Device Package :
- TO-39 (TO-205AD)
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~200°C TJ
- Max Operating Temperature :
- 200°C
- Power - Max :
- 800mW
- Current - Collector (Ic) (Max) :
- 800mA
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 75V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Published :
- 2007
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Max Power Dissipation :
- 800mW
- Datasheets
- 2N2219A
NPN -55°C~200°C TJ 10nA 1 Elements TO-205AD, TO-39-3 Metal Can Bulk Through Hole
2N2219A Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Product comes in the supplier's device package TO-39 (TO-205AD).There is a 50V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
2N2219A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-39 (TO-205AD)
2N2219A Applications
There are a lot of Microsemi Corporation
2N2219A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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