2N2219
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- Mfr.Part #
- 2N2219
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.8A TO39
- Stock
- 39,802
- In Stock ：
- 39,802
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 200°C
- Max Power Dissipation :
- 800mW
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector (Ic) (Max) :
- 800mA
- Mounting Type :
- Through Hole
- Max Collector Current :
- 800mA
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Power Dissipation :
- 800mW
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Supplier Device Package :
- TO-39 (TO-205AD)
- Collector Base Voltage (VCBO) :
- 75V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Number of Elements :
- 1
- Mount :
- Through Hole
- Number of Pins :
- 3
- Polarity :
- NPN
- Packaging :
- Bulk
- Factory Lead Time :
- 8 Weeks
- Current - Collector Cutoff (Max) :
- 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Published :
- 2007
- Operating Temperature :
- -55°C~200°C TJ
- Collector Emitter Voltage (VCEO) :
- 50V
- Power - Max :
- 800mW
- RoHS Status :
- Non-RoHS Compliant
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 50V
- Min Operating Temperature :
- -55°C
- Datasheets
- 2N2219
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NPN -55°C~200°C TJ 10nA 1 Elements TO-205AD, TO-39-3 Metal Can Bulk Through Hole
2N2219A Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Product comes in the supplier's device package TO-39 (TO-205AD).There is a 50V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
2N2219A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-39 (TO-205AD)
2N2219A Applications
There are a lot of Microsemi Corporation
2N2219A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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