2N2218AL
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- Mfr.Part #
- 2N2218AL
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO5
- Stock
- 37,144
- In Stock ：
- 37,144
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 800mW
- Configuration :
- Single
- Radiation Hardening :
- No
- Packaging :
- Bulk
- Terminal Form :
- Wire
- Current - Collector (Ic) (Max) :
- 800mA
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Terminal Finish :
- TIN LEAD
- Pbfree Code :
- No
- Operating Temperature :
- -55°C~200°C TJ
- Number of Elements :
- 1
- HTS Code :
- 8541.21.00.95
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 50V
- Mounting Type :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Max Collector Current :
- 800mA
- Current - Collector Cutoff (Max) :
- 10nA
- Factory Lead Time :
- 12 Weeks
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- JESD-609 Code :
- e0
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 75V
- Case Connection :
- COLLECTOR
- Published :
- 2007
- Datasheets
- 2N2218AL
NPN -55°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
2N2218AL Overview
In this device, the DC current gain is 40 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
2N2218AL Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
2N2218AL Applications
There are a lot of Microsemi Corporation
2N2218AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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