2N2218AL
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- Mfr.Part #
- 2N2218AL
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO5
- Stock
- 37,144
- In Stock ：
- 37,144
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Max Power Dissipation :
- 800mW
- Terminal Position :
- BOTTOM
- Configuration :
- Single
- Transistor Type :
- NPN
- Factory Lead Time :
- 12 Weeks
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- JESD-609 Code :
- e0
- Terminal Finish :
- TIN LEAD
- HTS Code :
- 8541.21.00.95
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Packaging :
- Bulk
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 50V
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Wire
- Operating Temperature :
- -55°C~200°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Published :
- 2007
- RoHS Status :
- Non-RoHS Compliant
- Pbfree Code :
- No
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 10nA
- Number of Elements :
- 1
- Max Collector Current :
- 800mA
- Collector Base Voltage (VCBO) :
- 75V
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Current - Collector (Ic) (Max) :
- 800mA
- Datasheets
- 2N2218AL
NPN -55°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
2N2218AL Overview
In this device, the DC current gain is 40 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
2N2218AL Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
2N2218AL Applications
There are a lot of Microsemi Corporation
2N2218AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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