2N2218AL
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- Mfr.Part #
- 2N2218AL
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO5
- Stock
- 37,144
- In Stock ：
- 37,144
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Current - Collector (Ic) (Max) :
- 800mA
- Mount :
- Through Hole
- HTS Code :
- 8541.21.00.95
- Radiation Hardening :
- No
- Terminal Position :
- BOTTOM
- Max Collector Current :
- 800mA
- RoHS Status :
- Non-RoHS Compliant
- Pbfree Code :
- No
- Collector Emitter Voltage (VCEO) :
- 50V
- Published :
- 2007
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Collector Base Voltage (VCBO) :
- 75V
- JESD-609 Code :
- e0
- Transistor Application :
- SWITCHING
- Packaging :
- Bulk
- Number of Pins :
- 3
- Terminal Form :
- Wire
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 10nA
- Operating Temperature :
- -55°C~200°C TJ
- Max Power Dissipation :
- 800mW
- Configuration :
- Single
- ECCN Code :
- EAR99
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 12 Weeks
- Transistor Type :
- NPN
- Terminal Finish :
- TIN LEAD
- Datasheets
- 2N2218AL
NPN -55°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
2N2218AL Overview
In this device, the DC current gain is 40 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
2N2218AL Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
2N2218AL Applications
There are a lot of Microsemi Corporation
2N2218AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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